STMicroelectronics_PD57018-E
original

STMicroelectronics
PD57018-E

285-PD57018-E
RF MOSFET N-CH 65V 2.5A 1GHz 18W 3-Pin PowerSO-10RF
23 Weeks

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Tech Specifications

Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
65V
Drain to Source Resistance
760mR
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
945MHz
Gain
16.5dB
Gate to Source Voltage (Vgs)
20V
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PD57018-E Description

PD57018-E Description

The PD57018-E is a high-performance LDMOS RF MOSFET designed and manufactured by STMicroelectronics. This device is optimized for use in a variety of applications, including wireless communication systems, radar systems, and other high-frequency applications. With a rated voltage of 65V and a power output of 18W, the PD57018-E offers excellent performance in terms of power handling and efficiency.

PD57018-E Features

  • Current Rating: The PD57018-E has a current rating of 2.5A, which allows it to handle high current applications with ease.
  • Voltage - Rated: With a rated voltage of 65V, this device is suitable for high-voltage applications.
  • Power - Output: The PD57018-E can deliver up to 18W of power, making it ideal for high-power applications.
  • Frequency: Operating at a frequency of 945MHz, this device is well-suited for use in wireless communication systems.
  • Gain: The PD57018-E boasts a gain of 16.5dB, ensuring high signal strength and improved performance.
  • Technology: Utilizing LDMOS technology, this device offers excellent linearity and efficiency.
  • RoHS Compliance: The PD57018-E is compliant with RoHS3 standards, making it an environmentally friendly choice.
  • REACH Status: This device is REACH unaffected, ensuring compliance with European chemical regulations.

PD57018-E Applications

The PD57018-E is ideal for use in a variety of high-frequency applications, including:

  1. Wireless Communication Systems: Due to its high power output and excellent gain, the PD57018-E is well-suited for use in wireless communication systems, such as cellular base stations and Wi-Fi routers.
  2. Radar Systems: The high power handling and frequency capabilities of the PD57018-E make it an excellent choice for radar systems, where high power and linearity are critical.
  3. Broadcasting: The PD57018-E can be used in broadcasting applications, such as radio and television transmitters, where high power and efficiency are required.

Conclusion of PD57018-E

The PD57018-E is a high-performance LDMOS RF MOSFET that offers excellent power handling, efficiency, and linearity. Its unique features, such as high current rating, RoHS compliance, and REACH unaffected status, make it an ideal choice for a variety of high-frequency applications. With its impressive technical specifications and performance benefits, the PD57018-E stands out as a superior option compared to similar models in the market.

FAQ

What operating temperature range does PD57018-E support?
PD57018-E has an operating temperature range of 165°C.
What voltage specification is listed for PD57018-E?
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What is PD57018-E?
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