STMicroelectronics

PD57018S-E  

RF FETs, MOSFETs

PD57018S-E Description

The PD57018S-E from STMicroelectronics is a high-performance RF LDMOS MOSFET designed for demanding RF power amplification applications. Operating at 945MHz with a rated voltage of 65V and a test voltage of 28V, this device delivers 18W output power at 2.5A current rating, making it ideal for high-efficiency RF systems. Its 16.5dB gain ensures superior signal amplification, while the LDMOS technology provides enhanced thermal stability and linearity. Packaged in a POWERSO-10RF tube, the PD57018S-E is ROHS3 compliant and adheres to REACH and EAR99 regulations, ensuring environmental and export compliance. With an MSL 3 (168 hours) rating, it offers reliable handling for industrial applications.

PD57018S-E Features

• High Power Output: 18W at 28V, optimized for RF amplification.
• LDMOS Technology: Delivers superior thermal performance and linearity.
• High Gain: 16.5dB ensures efficient signal amplification.
• Wide Voltage Range: Rated up to 65V, tested at 28V for robust operation.
• Low Current Test Requirement: 100 mA for efficient testing and validation.
• Industrial Compliance: ROHS3, REACH Unaffected, and EAR99 certified.
• Reliable Packaging: POWERSO-10RF tube ensures mechanical and thermal stability.

PD57018S-E Applications

The PD57018S-E excels in RF power amplification for:

• Base Station Transmitters: High-efficiency amplification for cellular infrastructure.
• Industrial RF Systems: Reliable performance in harsh environments.
• Broadcast Equipment: Stable signal amplification for TV and radio transmitters.
• Military & Aerospace: Compliant with stringent reliability and environmental standards.
• ISM Band Applications: Ideal for 900MHz-1GHz frequency range systems.

Conclusion of PD57018S-E

The PD57018S-E stands out as a high-efficiency, high-gain RF LDMOS MOSFET tailored for power amplification in critical RF applications. Its 18W output, 16.5dB gain, and LDMOS technology make it a superior choice over conventional MOSFETs, offering enhanced thermal management and signal integrity. With compliance to ROHS3, REACH, and EAR99, it meets global regulatory standards, while its POWERSO-10RF packaging ensures durability. Whether for telecom infrastructure, broadcast systems, or industrial RF designs, the PD57018S-E delivers unmatched performance and reliability.

PD57018S-E Documents

Download datasheets and manufacturer documentation for PD57018S-E

PCN :

Product Change Notification (PDF)       Top Metallization Switch from AlSiCu to AlCu on all LDMOS Technologies (PDF)