STMicroelectronics_PD57018S-E
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STMicroelectronics
PD57018S-E

285-PD57018S-E
RF MOSFET N-CH 65V 2.5A 18W 945MHz Surface Mount
23 Weeks

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Tech Specifications

Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
65V
Drain to Source Resistance
760mR
Frequency
945MHz
Gain
16.5dB
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Frequency
1GHz
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PD57018S-E Description

PD57018S-E Description

The PD57018S-E from STMicroelectronics is a high-performance RF LDMOS MOSFET designed for demanding RF power amplification applications. Operating at 945MHz with a rated voltage of 65V and a test voltage of 28V, this device delivers 18W output power at 2.5A current rating, making it ideal for high-efficiency RF systems. Its 16.5dB gain ensures superior signal amplification, while the LDMOS technology provides enhanced thermal stability and linearity. Packaged in a POWERSO-10RF tube, the PD57018S-E is ROHS3 compliant and adheres to REACH and EAR99 regulations, ensuring environmental and export compliance. With an MSL 3 (168 hours) rating, it offers reliable handling for industrial applications.

PD57018S-E Features

  • High Power Output: 18W at 28V, optimized for RF amplification.
  • LDMOS Technology: Delivers superior thermal performance and linearity.
  • High Gain: 16.5dB ensures efficient signal amplification.
  • Wide Voltage Range: Rated up to 65V, tested at 28V for robust operation.
  • Low Current Test Requirement: 100 mA for efficient testing and validation.
  • Industrial Compliance: ROHS3, REACH Unaffected, and EAR99 certified.
  • Reliable Packaging: POWERSO-10RF tube ensures mechanical and thermal stability.

PD57018S-E Applications

The PD57018S-E excels in RF power amplification for:

  • Base Station Transmitters: High-efficiency amplification for cellular infrastructure.
  • Industrial RF Systems: Reliable performance in harsh environments.
  • Broadcast Equipment: Stable signal amplification for TV and radio transmitters.
  • Military & Aerospace: Compliant with stringent reliability and environmental standards.
  • ISM Band Applications: Ideal for 900MHz-1GHz frequency range systems.

Conclusion of PD57018S-E

The PD57018S-E stands out as a high-efficiency, high-gain RF LDMOS MOSFET tailored for power amplification in critical RF applications. Its 18W output, 16.5dB gain, and LDMOS technology make it a superior choice over conventional MOSFETs, offering enhanced thermal management and signal integrity. With compliance to ROHS3, REACH, and EAR99, it meets global regulatory standards, while its POWERSO-10RF packaging ensures durability. Whether for telecom infrastructure, broadcast systems, or industrial RF designs, the PD57018S-E delivers unmatched performance and reliability.

FAQ

Are there related or alternative parts for PD57018S-E?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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