STMicroelectronics_SCTL90N65G2V
original

STMicroelectronics
SCTL90N65G2V

278-SCTL90N65G2V
PDF Datasheet
SILICON CARBIDE POWER MOSFET 650
52 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Unit Weight
0.006349 oz
Configuration
Single Triple Source
Typical Turn-Off Delay Time (ns)
58
Maximum Gate Source Leakage Current (nA)
100
Id - Continuous Drain Current
40 A
Input Capacitance (Ciss) (Max) @ Vds
3380 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs
157 nC @ 18 V
Typical Rise Time (ns)
16
Show More

SCTL90N65G2V Description

SCTL90N65G2V Description

The SCTL90N65G2V from STMicroelectronics is a high-performance 650V Silicon Carbide (SiC) power MOSFET designed for demanding power electronics applications. Leveraging SiCFET technology, it delivers superior efficiency, thermal performance, and switching characteristics compared to traditional silicon-based MOSFETs. With a continuous drain current (Id) of 40A (Tc) and an ultra-low on-resistance (Rds(on)) of 24mOhm at 18V gate drive, this device minimizes conduction losses, making it ideal for high-power, high-frequency circuits. Packaged in a PowerFlat™ (8x8) HV surface-mount format, it ensures excellent thermal dissipation and compact PCB integration.

SCTL90N65G2V Features

  • SiC Technology: Offers lower switching losses, higher thermal conductivity, and better high-temperature performance than silicon MOSFETs.
  • High Voltage & Current Rating: 650V Vdss and 40A Id support robust operation in high-power systems.
  • Low Rds(on): 24mOhm @ 18V reduces power dissipation and improves efficiency.
  • Fast Switching: Gate charge (Qg) of 157nC and input capacitance (Ciss) of 3380pF enable high-frequency operation.
  • Thermal Efficiency: 935W (Tc) power dissipation and PowerFlat™ package optimize heat management.
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL3 rated for industrial durability.

SCTL90N65G2V Applications

  • Electric Vehicle (EV) Systems: On-board chargers, DC-DC converters, and traction inverters benefit from SiC efficiency.
  • Renewable Energy: Solar inverters and wind power converters leverage its high-voltage capability.
  • Industrial Power Supplies: Server PSUs, welding equipment, and motor drives utilize its low-loss switching.
  • High-Frequency Converters: Telecom and datacenter power systems require its fast switching and thermal resilience.

Conclusion of SCTL90N65G2V

The SCTL90N65G2V stands out as a high-efficiency, high-reliability SiC MOSFET for next-generation power electronics. Its combination of low Rds(on), high current handling, and superior thermal performance makes it a top choice for EV, renewable energy, and industrial applications. STMicroelectronics' advanced packaging and SiC technology ensure optimal performance in space-constrained, high-power designs.

FAQ

Are there related or alternative parts for SCTL90N65G2V?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What is SCTL90N65G2V?
What is the mounting type of SCTL90N65G2V?
Does SCTL90N65G2V have quantity-based pricing?
What voltage specification is listed for SCTL90N65G2V?
Availability (In Stock : 4 )
Quantity Unit Price Ext. Price
1+ $41.47028 $41.47
10+ $40.15715 $401.57
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ