STMicroelectronics_SCTL90N65G2V
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STMicroelectronics
SCTL90N65G2V

278-SCTL90N65G2V
PDF Datasheet
SILICON CARBIDE POWER MOSFET 650
52 Weeks

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Tech Specifications

Unit Weight
0.006349 oz
Configuration
Single Triple Source
Typical Turn-Off Delay Time (ns)
58
Maximum Gate Source Leakage Current (nA)
100
Id - Continuous Drain Current
40 A
Input Capacitance (Ciss) (Max) @ Vds
3380 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs
157 nC @ 18 V
Typical Rise Time (ns)
16
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SCTL90N65G2V Description

SCTL90N65G2V Description

The SCTL90N65G2V from STMicroelectronics is a high-performance 650V Silicon Carbide (SiC) power MOSFET designed for demanding power electronics applications. Leveraging SiCFET technology, it delivers superior efficiency, thermal performance, and switching characteristics compared to traditional silicon-based MOSFETs. With a continuous drain current (Id) of 40A (Tc) and an ultra-low on-resistance (Rds(on)) of 24mOhm at 18V gate drive, this device minimizes conduction losses, making it ideal for high-power, high-frequency circuits. Packaged in a PowerFlat™ (8x8) HV surface-mount format, it ensures excellent thermal dissipation and compact PCB integration.

SCTL90N65G2V Features

  • SiC Technology: Offers lower switching losses, higher thermal conductivity, and better high-temperature performance than silicon MOSFETs.
  • High Voltage & Current Rating: 650V Vdss and 40A Id support robust operation in high-power systems.
  • Low Rds(on): 24mOhm @ 18V reduces power dissipation and improves efficiency.
  • Fast Switching: Gate charge (Qg) of 157nC and input capacitance (Ciss) of 3380pF enable high-frequency operation.
  • Thermal Efficiency: 935W (Tc) power dissipation and PowerFlat™ package optimize heat management.
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL3 rated for industrial durability.

SCTL90N65G2V Applications

  • Electric Vehicle (EV) Systems: On-board chargers, DC-DC converters, and traction inverters benefit from SiC efficiency.
  • Renewable Energy: Solar inverters and wind power converters leverage its high-voltage capability.
  • Industrial Power Supplies: Server PSUs, welding equipment, and motor drives utilize its low-loss switching.
  • High-Frequency Converters: Telecom and datacenter power systems require its fast switching and thermal resilience.

Conclusion of SCTL90N65G2V

The SCTL90N65G2V stands out as a high-efficiency, high-reliability SiC MOSFET for next-generation power electronics. Its combination of low Rds(on), high current handling, and superior thermal performance makes it a top choice for EV, renewable energy, and industrial applications. STMicroelectronics' advanced packaging and SiC technology ensure optimal performance in space-constrained, high-power designs.

FAQ

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Yes. SCTL90N65G2V currently has 2 pricing tier(s), starting from 1 units.
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Availability (In Stock : 2 )
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1+ $41.70730 $41.71
10+ $40.44890 $404.49
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