STMicroelectronics

STBP112CVDJ6F

STBP112CVDJ6F is a high-power, low-side MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from STMicroelectronics. It is designed for use in a variety of power switching applications, including motor control, power supplies, and automotive systems.

Description:

The STBP112CVDJ6F is a N-channel MOSFET with a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 110A. It features a low on-state resistance (Rds(on)) of 3.5mOhm max, which helps to minimize power dissipation and improve efficiency in power switching applications.

Features:

1. High-power, low-side MOSFET
2. N-channel, enhancement mode
3. Drain-source voltage (Vds) of 60V
4. Continuous drain current (Id) of 110A
5. Low on-state resistance (Rds(on)) of 3.5mOhm max
6. Avalanche energy capable
7. Built-in gate protection diodes
8. Suitable for use in power switching applications

Applications:

1. Motor control
2. Power supplies
3. Automotive systems
4. Industrial control systems
5. Battery management systems
6. Switch mode power supplies (SMPS)
7. High-current switching applications

The STBP112CVDJ6F is available in a PowerPAK SO-8 package, which provides excellent thermal performance and ease of use in a compact form factor. Its high-power capabilities and low on-state resistance make it an ideal choice for a wide range of power switching applications where efficiency and reliability are critical.