STMicroelectronics

STD80N6F7  

Single FETs, MOSFETs

STD80N6F7 Description

The STD80N6F7 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring efficient power management and control. With a drain-to-source voltage of 60V and a continuous drain current of 40A at 25°C, this MOSFET is well-suited for a variety of high-power applications. The device is manufactured using advanced MOSFET technology, ensuring high efficiency and reliability.

STD80N6F7 Features

• Input Capacitance (Ciss): The STD80N6F7 boasts a maximum input capacitance of 1600 pF at 30V, ensuring fast switching speeds and low power consumption.
• Gate Charge (Qg): With a maximum gate charge of 25 nC at 10V, this MOSFET minimizes power loss during switching, improving overall efficiency.
• Rds On (Max): The STD80N6F7 offers a low on-resistance of 8mOhm at 20A and 10V, reducing power dissipation and heat generation.
• Vgs(th) (Max): The threshold voltage is 4V at 250µA, providing precise control over the gate voltage.
• Drain to Source Voltage (Vdss): The device can handle voltages up to 60V, making it suitable for high-voltage applications.
• Power Dissipation (Max): The STD80N6F7 can dissipate up to 100W at the case temperature (Tc), ensuring reliable operation under demanding conditions.
• Mounting Type: The device is surface mount, allowing for compact and efficient PCB layouts.

STD80N6F7 Applications

The STD80N6F7 is ideal for applications where high power and efficiency are critical, such as:

• Power Supplies: Its high voltage and current ratings make it suitable for power supply designs, including switching power supplies and battery chargers.
• Motor Control: The low on-resistance and high current capability make it an excellent choice for motor control applications, such as electric vehicles and industrial motor drives.
• Industrial Automation: The STD80N6F7 can be used in various industrial automation systems, including robotics and conveyor systems, where high power and reliability are essential.

Conclusion of STD80N6F7

The STD80N6F7 from STMicroelectronics is a versatile and high-performance MOSFET, offering a combination of high voltage, low on-resistance, and fast switching capabilities. Its unique features, such as low gate charge and high input capacitance, make it an excellent choice for applications requiring high efficiency and reliability. With its robust performance and compliance with industry standards, the STD80N6F7 is a reliable solution for a wide range of high-power applications.

STD80N6F7 Documents

Download datasheets and manufacturer documentation for STD80N6F7

Datasheets :

STD80N6F7      

PCN Packaging :

Mult Dev Inner Box Chg 9/Dec/2021