STMicroelectronics

STD86N3LH5  

Single FETs, MOSFETs

STMicroelectronics' STD86N3LH5 is a high voltage N-channel MOSFET transistor. It is designed for use in a variety of applications, including high voltage switching and power management.

Description:

The STD86N3LH5 is an N-channel enhancement mode field effect transistor (MOSFET). It is designed for use in high voltage applications, with a drain-source voltage (VDS) of up to 600V. The device has a continuous drain current (ID) of 4.3A and a gate-source voltage (VGS) of ±20V.

Features:

• N-channel enhancement mode MOSFET
• High voltage operation: VDS up to 600V
• Continuous drain current: ID up to 4.3A
• Gate-source voltage: ±20V
• Low on-state resistance (RDS(on))
• Fast switching characteristics
• Suitable for use in high voltage switching and power management applications

Applications:

The STD86N3LH5 is suitable for a wide range of applications, including:

• High voltage switching
• Power management in industrial and automotive systems
• Motor control
• Battery management systems
• DC-DC converters
• Inverters

It is important to note that the specific applications and suitability of the STD86N3LH5 will depend on the specific requirements of the system in which it is being used. It is always recommended to carefully review the datasheet and consult with a qualified engineer before selecting a MOSFET for a particular application.

STD86N3LH5 Documents

Download datasheets and manufacturer documentation for STD86N3LH5

Datasheets :

STD86N3LH5      

PCN Packaging :

Mult Dev Inner Box Chg 9/Dec/2021      

Other Related Documents :

STD86N3LH5 View All Specifications