STMicroelectronics_STE53NC50

STMicroelectronics
STE53NC50  
Single FETs, MOSFETs

STMicroelectronics
STE53NC50
278-STE53NC50
MOSFET N-CH 500V 53A ISOTOP
In Stock : 100

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

STE53NC50 Description

STE53NC50 Description

The STE53NC50 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding power management applications. With its robust 500V drain-to-source voltage rating and a continuous drain current of 53A at 25°C, this device delivers exceptional performance in a compact ISOTOP package. The STE53NC50 is engineered with advanced MOSFET technology, ensuring high efficiency and reliability in various electronic systems.

STE53NC50 Features

  • High Voltage Rating: The STE53NC50 boasts a 500V drain-to-source voltage, making it suitable for high-voltage applications.
  • High Current Capacity: Capable of handling 53A continuous drain current at 25°C, this MOSFET is ideal for power-intensive applications.
  • Low On-Resistance: With an Rds(on) of just 80mOhm at 27A and 10V, the STE53NC50 minimizes power losses and enhances efficiency.
  • Advanced MOSFET Technology: Utilizing PowerMESH™ II technology, this device offers superior performance and reliability.
  • Robust Package: The ISOTOP package provides excellent thermal management and mechanical stability.
  • Compliance: The STE53NC50 is REACH unaffected and RoHS3 compliant, ensuring environmental and regulatory compliance.

STE53NC50 Applications

The STE53NC50 is well-suited for a variety of applications where high voltage and current handling are required:

  • Industrial Control Systems: Its high voltage and current ratings make it ideal for motor drives and power supplies in industrial settings.
  • Automotive Applications: The robustness of the STE53NC50 makes it suitable for automotive power management systems, such as battery chargers and inverters.
  • Renewable Energy Systems: In solar and wind power systems, the STE53NC50 can efficiently manage power conversion and distribution.
  • Telecommunications: For power supplies in telecommunications equipment, the STE53NC50 provides reliable performance and high efficiency.

Conclusion of STE53NC50

The STE53NC50 from STMicroelectronics is a powerful and versatile N-Channel MOSFET, offering a combination of high voltage and current ratings with advanced technology. Its unique features, such as low on-resistance and a robust ISOTOP package, make it an excellent choice for demanding applications in industrial control, automotive, renewable energy, and telecommunications. With its compliance with REACH and RoHS standards, the STE53NC50 is not only a high-performance device but also an environmentally responsible choice.

Tech Specifications

Unit Weight
Configuration
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Length
Forward Transconductance - Min
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Operating Temperature (°C) (max)
Operating Temperature (°C) (min)
Grade
ECCN (EU)
RoHs compliant

STE53NC50 Documents

Download datasheets and manufacturer documentation for STE53NC50

Ersa Mult Dev 17/Apr/2023      
Ersa STE53NC50      
Ersa STE53NC50 View All Specifications      
Ersa STE53NC50      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service