STMicroelectronics_STF10LN80K5

STMicroelectronics
STF10LN80K5  
Single FETs, MOSFETs

STMicroelectronics
STF10LN80K5
278-STF10LN80K5
Ersa
STMicroelectronics-STF10LN80K5-datasheets-5243084.pdf
MOSFET N-CH 800V 8A TO220FP
In Stock : 915

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STF10LN80K5 Description

STF10LN80K5 Description

The STF10LN80K5 from STMicroelectronics is an N-channel 800V, 8A power MOSFET housed in a TO220FP package, designed for high-voltage switching applications. Part of the MDmesh™ series, it leverages advanced Metal Oxide (MOSFET) technology to deliver low conduction losses and high switching efficiency. With a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 8A (at 25°C case temperature), this device is optimized for robust performance in demanding power electronics systems. Its low gate charge (Qg) of 15nC @ 10V and input capacitance (Ciss) of 427pF @ 100V ensure fast switching speeds, reducing power dissipation.

STF10LN80K5 Features

  • High Voltage Rating: 800V Vdss for industrial and automotive applications.
  • Low On-Resistance: 630mΩ @ 4A, 10V (Rds On) minimizes conduction losses.
  • Fast Switching: Optimized gate charge (15nC) and low Ciss for efficient high-frequency operation.
  • Thermal Performance: 25W power dissipation (Tc) ensures reliability under load.
  • Robust Construction: TO220FP package offers mechanical strength and thermal efficiency.
  • Wide Gate Drive Range: ±30V Vgs (max) for flexible drive circuit compatibility.
  • Compliance: ROHS3, REACH unaffected, ECCN EAR99, and MSL 1 (Unlimited) for environmental and regulatory adherence.

STF10LN80K5 Applications

  • Switched-Mode Power Supplies (SMPS): High-efficiency AC-DC and DC-DC converters.
  • Motor Drives: Inverters and H-bridge configurations for industrial motors.
  • Lighting Systems: LED drivers and ballast control circuits.
  • Renewable Energy: Solar inverters and wind power converters.
  • Automotive Systems: On-board chargers (OBC) and auxiliary power modules.

Conclusion of STF10LN80K5

The STF10LN80K5 stands out for its high-voltage capability, low Rds On, and fast switching performance, making it ideal for energy-efficient power conversion. Its MDmesh™ technology ensures superior thermal and electrical characteristics, while the TO220FP package enhances heat dissipation. Suitable for industrial, automotive, and renewable energy applications, this MOSFET combines reliability with cutting-edge performance, backed by STMicroelectronics' quality assurance.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STF10LN80K5 Documents

Download datasheets and manufacturer documentation for STF10LN80K5

Ersa STF10LN80K5 Datasheet       Spice Model Tutorial for Power MOSFETS      
Ersa STF10LN80K5 PSpice Model      
Ersa STF10LN80K5 Datasheet       Spice Model Tutorial for Power MOSFETS      

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