The STGAP2HSMTR from STMicroelectronics is a high-performance, single-channel gate driver featuring 5kVrms galvanic isolation using capacitive coupling technology. Designed for demanding power electronics applications, it integrates robust isolation with fast switching capabilities, making it ideal for driving MOSFETs, IGBTs, and SiC/GaN power devices. The device operates with an output supply voltage range of 3V to 5.5V, delivering 4A peak output current for high-efficiency switching. With a propagation delay of 90ns max and low pulse width distortion (20ns max), it ensures precise timing control in high-frequency circuits. Its 100V/ns common-mode transient immunity (CMTI) enhances reliability in noisy environments, while RoHS3 compliance and UL certification validate its suitability for industrial and automotive applications.
The STGAP2HSMTR stands out for its high isolation, fast switching, and exceptional noise immunity, making it a superior choice for high-power and high-frequency designs. Its 4A symmetric drive strength, low propagation delay, and compact form factor address critical challenges in modern power electronics, from industrial automation to green energy systems. Engineers can leverage its UL-certified isolation and RoHS3 compliance to meet stringent safety and environmental standards without compromising performance.
Download datasheets and manufacturer documentation for STGAP2HSMTR