STMicroelectronics_STGD3HF60HDT4

STMicroelectronics
STGD3HF60HDT4  
Single IGBTs

STMicroelectronics
STGD3HF60HDT4
279-STGD3HF60HDT4
Ersa
STMicroelectronics-STGD3HF60HDT4-datasheets-4537709.pdf
IGBT 600V 7.5A 38W DPAK
In Stock : 19594

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STGD3HF60HDT4 Description

STGD3HF60HDT4 Description

The STGD3HF60HDT4 is a high-performance, single insulated gate bipolar transistor (IGBT) from STMicroelectronics. It is designed to deliver exceptional performance in various power electronics applications. With a collector-emitter breakdown voltage of 600V and a maximum collector current of 7.5A, this IGBT is suitable for high-power applications. The device is available in a DPAK package, making it ideal for surface-mount applications.

STGD3HF60HDT4 Features

  • Technical Specifications:

    • Reverse Recovery Time (trr): 85 ns
    • Voltage - Collector Emitter Breakdown (Max): 600 V
    • Td (on/off) @ 25°C: 11ns/60ns
    • Current - Collector (Ic) (Max): 7.5 A
    • Vce(on) (Max) @ Vge, Ic: 2.95V @ 15V, 1.5A
    • Gate Charge: 12 nC
    • Power - Max: 38 W
    • Switching Energy: 19µJ (on), 12µJ (off)
  • Performance Benefits:

    • Low switching energy and reverse recovery time, resulting in high efficiency and reduced power loss.
    • High collector-emitter breakdown voltage and maximum collector current, making it suitable for high-power applications.
    • DPAK package for surface-mount applications.
  • Compliance and Packaging:

    • REACH Unaffected
    • ROHS3 Compliant
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Package: Tape & Reel (TR)

STGD3HF60HDT4 Applications

The STGD3HF60HDT4 is ideal for a wide range of power electronics applications, including:

  1. Industrial Motor Control: Due to its high power rating and low switching losses, it is suitable for motor control applications in industrial settings.
  2. Power Supplies: Its high breakdown voltage and low conduction losses make it an excellent choice for power supply designs.
  3. Renewable Energy Systems: The STGD3HF60HDT4 can be used in solar inverters and wind turbine systems, where high efficiency and reliability are crucial.
  4. Electric Vehicles: This IGBT can be used in electric vehicle chargers and powertrain systems, where high power and efficiency are required.

Conclusion of STGD3HF60HDT4

The STGD3HF60HDT4 is a high-performance IGBT from STMicroelectronics, offering excellent technical specifications and performance benefits. Its low switching energy, high breakdown voltage, and DPAK package make it an ideal choice for various power electronics applications, including industrial motor control, power supplies, renewable energy systems, and electric vehicles. With its compliance with REACH and RoHS standards, the STGD3HF60HDT4 is a reliable and environmentally friendly solution for high-power applications.

Tech Specifications

Configuration
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Package / Case
Typical Collector Emitter Saturation Voltage (V)
REACH Status
Channel Type
Maximum Gate Emitter Voltage (V)
EU RoHS
IGBT Type
Moisture Sensitivity Level (MSL)
Operating Temperature
Test Condition
Current - Collector (Ic) (Max)
ECCN
Supplier Temperature Grade
Mounting Type
Standard Package Name
Current - Collector Pulsed (Icm)
Pin Count
Mounting
Maximum Gate Emitter Leakage Current (uA)
Gate Charge
Lead Shape
SVHC
HTSUS
Package
Reverse Recovery Time (trr)
PCB changed
HTS
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Td (on/off) @ 25°C
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Input Type
Switching Energy
Maximum Continuous Collector Current (A)
SVHC Exceeds Threshold
Package Length
Series
Vce(on) (Max) @ Vge, Ic
Tab
Power - Max
Part Status
Package Width
Base Product Number
Mounting Style
Unit Weight
Gate-Emitter Leakage Current
RoHS
Minimum Operating Temperature
Technology
Collector-Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max
Continuous Collector Current at 25 C
Maximum Operating Temperature
Pd - Power Dissipation
USHTS
Maximum Gate Emitter Voltage

STGD3HF60HDT4 Documents

Download datasheets and manufacturer documentation for STGD3HF60HDT4

Ersa STGx3HF60HD(T4)      
Ersa Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      
Ersa STGB10NC60KD View All Specifications      
Ersa STGx3HF60HD(T4)      

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