The STGD3HF60HDT4 is a high-performance, single insulated gate bipolar transistor (IGBT) from STMicroelectronics. It is designed to deliver exceptional performance in various power electronics applications. With a collector-emitter breakdown voltage of 600V and a maximum collector current of 7.5A, this IGBT is suitable for high-power applications. The device is available in a DPAK package, making it ideal for surface-mount applications.
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The STGD3HF60HDT4 is ideal for a wide range of power electronics applications, including:
The STGD3HF60HDT4 is a high-performance IGBT from STMicroelectronics, offering excellent technical specifications and performance benefits. Its low switching energy, high breakdown voltage, and DPAK package make it an ideal choice for various power electronics applications, including industrial motor control, power supplies, renewable energy systems, and electric vehicles. With its compliance with REACH and RoHS standards, the STGD3HF60HDT4 is a reliable and environmentally friendly solution for high-power applications.
Download datasheets and manufacturer documentation for STGD3HF60HDT4