The STGF20H60DF is a high-performance, single IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics. This device is designed for applications requiring high efficiency and reliability in power management. With a maximum collector-emitter breakdown voltage of 600V and a maximum collector current of 40A, the STGF20H60DF is well-suited for various high-power applications.
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The STGF20H60DF is ideal for a variety of applications where high power and efficiency are critical:
The STGF20H60DF from STMicroelectronics stands out as a robust and efficient IGBT solution for high-power applications. Its combination of technical specifications, performance benefits, and compliance with environmental standards make it a top choice for designers looking to optimize power management in their systems. Whether in industrial automation, renewable energy, electric vehicles, or power supplies, the STGF20H60DF delivers reliable performance and long-term value.
Download datasheets and manufacturer documentation for STGF20H60DF