STMicroelectronics

STGP10M65DF2

STGP10M65DF2 Description

The STGP10M65DF2 is a high-performance IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for efficient power management in various applications. With a maximum collector-emitter breakdown voltage of 650V and a continuous collector current of 10A, this device offers robust performance in demanding environments. The Trench Field Stop IGBT technology ensures superior switching characteristics and reduced conduction losses, making it an ideal choice for power electronics applications.

STGP10M65DF2 Features

• Technical Specifications:

  • Reverse Recovery Time (trr): 96 ns
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Td (on/off) @ 25°C: 19ns/91ns
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 40 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
  • Gate Charge: 28 nC
  • Power - Max: 115 W
  • Switching Energy: 120µJ (on), 270µJ (off)

• Performance Benefits:

  • Low switching energy and fast switching times contribute to high efficiency in power conversion applications.
  • The Trench Field Stop technology minimizes conduction losses, improving overall system performance.

• Compliance and Packaging:

  • REACH Unaffected and ROHS3 Compliant, ensuring environmental sustainability.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), suitable for various manufacturing processes.
  • Package: Tube, facilitating easy handling and integration into designs.

STGP10M65DF2 Applications

The STGP10M65DF2 is well-suited for applications requiring high efficiency and robust performance in power management. Some specific use cases include:

• Industrial Motor Control: Its high current handling capability and low switching losses make it ideal for motor drives in industrial automation systems.
• Power Supplies: The device's ability to handle high voltages and currents makes it suitable for power supply designs, particularly in renewable energy applications.
• Solar Inverters: The STGP10M65DF2's high efficiency and robustness are crucial in solar power conversion systems, ensuring maximum energy yield.

Conclusion of STGP10M65DF2

The STGP10M65DF2 from STMicroelectronics stands out in the market due to its advanced Trench Field Stop IGBT technology, offering superior performance in terms of switching speed and efficiency. Its compliance with environmental regulations and robust design make it a preferred choice for demanding power electronics applications. With its unique features and advantages, the STGP10M65DF2 is poised to deliver reliable and efficient power management in a wide range of industrial and renewable energy systems.