The STGW40V60DLF is a high-performance, single IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics. This obsolete device is designed to offer robust performance in a variety of power electronics applications. With a maximum collector-emitter breakdown voltage of 600V, it is capable of handling high voltage demands. The device also boasts a maximum collector current of 80A and a maximum power rating of 283W, making it suitable for applications requiring substantial power handling capabilities.
The STGW40V60DLF's Trench Field Stop IGBT technology provides improved efficiency and reduced conduction losses, making it an excellent choice for power conversion applications. Its low Vce(on) and low gate charge contribute to high efficiency and fast switching, which are critical in high-power applications. The device's compliance with ROHS3 and REACH regulations ensures environmental friendliness and regulatory compliance.
The STGW40V60DLF is ideal for a range of high-power applications, including:
While the STGW40V60DLF is now considered obsolete, it remains a powerful and efficient IGBT option for legacy systems and applications that require its specific performance characteristics. Its high voltage and current ratings, combined with its low on-state voltage and fast switching capabilities, make it a strong contender in high-power applications. Although it may not be the latest technology, the STGW40V60DLF continues to offer reliable performance for applications that can leverage its strengths.
Download datasheets and manufacturer documentation for STGW40V60DLF