STMicroelectronics_STGW75H65DFB2-4

STMicroelectronics
STGW75H65DFB2-4  
Single IGBTs

STMicroelectronics
STGW75H65DFB2-4
279-STGW75H65DFB2-4
Ersa
STMicroelectronics-STGW75H65DFB2-4-datasheets-1709435.pdf
TRENCH GATE FIELD-STOP, 650 V, 7
In Stock : 610

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Quality Policy
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STGW75H65DFB2-4 Description

Tube provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single IGBTs that the STGW75H65DFB2-4 belongs to can be classified under the Discrete Semiconductors. STGW75H65DFB2-4 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. STGW75H65DFB2-4 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. STMicroelectronics plays a crucial role in ensuring the smooth flow of goods and meeting market demand. STMicroelectronics is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, STMicroelectronics builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

Unit Weight
Configuration
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
RoHS
Supplier Package
Package / Case
Technology
Typical Collector Emitter Saturation Voltage (V)
REACH Status
Channel Type
Maximum Gate Emitter Voltage (V)
EU RoHS
IGBT Type
Moisture Sensitivity Level (MSL)
Operating Temperature
Test Condition
Current - Collector (Ic) (Max)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Standard Package Name
Current - Collector Pulsed (Icm)
Pin Count
Mounting
Maximum Gate Emitter Leakage Current (uA)
Qualification
Gate Charge
Collector- Emitter Voltage VCEO Max
HTSUS
Package
USHTS
Maximum Gate Emitter Voltage
Reverse Recovery Time (trr)
PCB changed
HTS
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Td (on/off) @ 25°C
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Collector-Emitter Saturation Voltage
Mfr
Continuous Collector Current at 25 C
Maximum Operating Temperature
RoHS Status
Mounting Style
Input Type
Switching Energy
Maximum Continuous Collector Current (A)
Package Length
Minimum Operating Temperature
Series
Vce(on) (Max) @ Vge, Ic
Tab
Power - Max
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
RoHs compliant

STGW75H65DFB2-4 Documents

Download datasheets and manufacturer documentation for STGW75H65DFB2-4

Ersa STGW75H65DFB2-4      

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