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STGW75M65DF2
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STGW75M65DF2 Description
STGW75M65DF2 Description
The STGW75M65DF2 from STMicroelectronics is a high-performance 650V/120A trench gate field-stop IGBT designed for demanding power electronics applications. Housed in a through-hole package, this active-series device combines low conduction losses (Vce(on) of 2.1V @ 15V, 75A) with robust switching characteristics, making it ideal for high-efficiency systems. Its trench field-stop technology ensures superior thermal performance and reduced switching losses, with a reverse recovery time (trr) of 165 ns and switching energies of 690µJ (on) / 2.54mJ (off). Compliant with ROHS3 and REACH standards, it operates reliably under harsh conditions.
STGW75M65DF2 Features
- High Voltage & Current Handling: 650V collector-emitter breakdown voltage and 120A continuous current (225A pulsed).
- Low Losses: Optimized trench field-stop design minimizes Vce(on) and switching losses (Td(on/off): 47ns/125ns).
- Robust Gate Drive: Standard input type with 225 nC gate charge, compatible with 15V drive voltage.
- Thermal Efficiency: Max power dissipation of 468W and MSL1 (unlimited) moisture sensitivity.
- Reliability: REACH unaffected, EAR99/ECCN compliant, and tested under 400V, 75A, 3.3Ω conditions.
STGW75M65DF2 Applications
- Motor Drives: High-efficiency inverters for industrial and automotive systems.
- Power Supplies: SMPS, UPS, and PFC circuits requiring low conduction losses.
- Renewable Energy: Solar inverters and wind turbine converters.
- Welding Equipment: High-current switching with minimal thermal stress.
- Induction Heating: Fast switching for precision temperature control.
Conclusion of STGW75M65DF2
The STGW75M65DF2 stands out for its balanced trade-off between switching speed and conduction losses, backed by STMicroelectronics' trench field-stop technology. Its high current density, ruggedness, and compliance with environmental standards make it a top choice for engineers designing next-gen power systems. Whether in industrial motor drives or green energy solutions, this IGBT delivers reliability, efficiency, and scalability for high-power applications.



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