STMicroelectronics_STH180N10F3-6
original

STMicroelectronics
STH180N10F3-6

278-STH180N10F3-6
PDF Datasheet
100V 180A N-CH MOSFET TO-263-7 4.5mR 315W SM

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Tech Specifications

Package / Case
TO-263-7
Continuous Drain Current (ID)
180A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
4.5mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
4.5MR
Fall Time
6.9ns
Gate to Source Voltage (Vgs)
20V
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STH180N10F3-6 Description

N-Channel 100 V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6

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