STMicroelectronics_STL60N3LLH5

STMicroelectronics
STL60N3LLH5  
Single FETs, MOSFETs

STMicroelectronics
STL60N3LLH5
278-STL60N3LLH5
Ersa
STMicroelectronics-STL60N3LLH5-datasheets-960049.pdf
MOSFET N-CH 30V 60A POWERFLAT
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STL60N3LLH5 Description

STL60N3LLH5 Description

The STL60N3LLH5 is a high-performance N-Channel MOSFET from STMicroelectronics, specifically designed for power management applications. With a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 60A at 25°C, this device offers excellent electrical characteristics for demanding applications. The MOSFET features a low on-resistance (Rds On) of 7.1mOhm at 8.5A and 10V, ensuring high efficiency and minimal power loss. The gate charge (Qg) is maximized at 8nC @ 4.5V, contributing to fast switching speeds and reduced switching losses.

STL60N3LLH5 Features

  • Technology: MOSFET (Metal Oxide) - Reliable and efficient power management
  • Input Capacitance (Ciss): 1290 pF @ 25V - Minimizes capacitive effects and improves stability
  • Gate Charge (Qg): 8 nC @ 4.5V - Fast switching and reduced losses
  • Drain to Source Voltage (Vdss): 30V - Suitable for high-voltage applications
  • Power Dissipation (Max): 60W (Tc) - Capable of handling high power loads
  • Series: STripFET™ V - Advanced series for high-performance applications
  • Mounting Type: Surface Mount - Ideal for space-constrained designs
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Resistant to moisture and suitable for various environments

STL60N3LLH5 Applications

The STL60N3LLH5 is ideal for a variety of applications where high power and efficiency are critical:

  1. Power Supplies: Its high current and voltage ratings make it suitable for power supply designs.
  2. Industrial Automation: Reliable operation in harsh environments due to its moisture sensitivity level.
  3. Automotive Electronics: Capable of handling the high voltages and currents found in automotive systems.
  4. Telecommunications: Fast switching speeds and low on-resistance for efficient signal processing.

Conclusion of STL60N3LLH5

The STL60N3LLH5 is a robust N-Channel MOSFET from STMicroelectronics, offering a combination of high power handling, low on-resistance, and fast switching capabilities. Its unique features, such as low gate charge and high input capacitance, make it an excellent choice for demanding power management applications. While the product is now considered obsolete, it remains a reliable option for legacy systems or applications where high performance and efficiency are paramount.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
Typical Turn-Off Delay Time (ns)
HTS
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Typical Fall Time (ns)
Package Height
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
SVHC Exceeds Threshold
Maximum Drain Source Resistance (mOhm)
Package Length
Supplier Temperature Grade
Pin Count
Mounting
Lead Shape
Part Status
SVHC
Package Width
Typical Gate Charge @ Vgs (nC)

STL60N3LLH5 Documents

Download datasheets and manufacturer documentation for STL60N3LLH5

Ersa STL60N3LLH5      
Ersa IRF630 View All Specifications      
Ersa STL60N3LLH5      

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