STMicroelectronics_STP140NF75

STMicroelectronics
STP140NF75  
Single FETs, MOSFETs

STMicroelectronics
STP140NF75
278-STP140NF75
MOSFET N-CH 75V 120A TO220AB
In Stock : 1116

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STP140NF75 Description

STP140NF75 Description

The STP140NF75 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power management and control. With a drain-to-source voltage (Vdss) of 75V and a continuous drain current (Id) of 120A at 25°C, this device is well-suited for demanding power electronics applications.

STP140NF75 Features

  • High Voltage and Current Ratings: The STP140NF75 boasts a drain-to-source voltage (Vdss) of 75V and can handle continuous drain currents up to 120A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum on-resistance (Rds On) of 7.5mOhm at 70A and 10V, this MOSFET offers efficient power dissipation and reduced power losses.
  • Robust Gate Drive: The device has a maximum gate-source voltage (Vgs) of ±20V, ensuring reliable operation across a wide range of gate drive conditions.
  • Low Gate Charge: The maximum gate charge (Qg) is 218nC at 10V, contributing to faster switching speeds and reduced switching losses.
  • High Power Dissipation: The STP140NF75 can dissipate up to 310W of power at the case temperature (Tc), making it suitable for high-power applications.
  • Compliance and Environmental Standards: This device is compliant with the RoHS3 directive and is unaffected by REACH regulations, ensuring environmental responsibility and compliance with industry standards.

STP140NF75 Applications

The STP140NF75 is an excellent choice for a variety of high-power applications, including:

  • Power Supplies: Due to its high voltage and current ratings, this MOSFET is ideal for use in power supply designs, where efficient power management is critical.
  • Motor Control: The low on-resistance and high current capability make it suitable for motor control applications, where precise control and efficient power delivery are essential.
  • Industrial Automation: In industrial automation systems, the STP140NF75 can be used for high-power switching and control, ensuring reliable operation in demanding environments.

Conclusion of STP140NF75

The STP140NF75 from STMicroelectronics is a powerful and efficient N-Channel MOSFET, offering a combination of high voltage and current ratings, low on-resistance, and compliance with environmental standards. Its unique features make it an ideal choice for high-power applications in power supplies, motor control, and industrial automation. With its robust performance and reliable operation, the STP140NF75 is a valuable addition to any high-power electronics design.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP140NF75 Documents

Download datasheets and manufacturer documentation for STP140NF75

Ersa ST(B,P)140NF75(-1)      
Ersa STP140NF75 View All Specifications      
Ersa ST(B,P)140NF75(-1)      

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