STMicroelectronics
STP18N60DM2

278-STP18N60DM2
PDF Datasheet
N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package
16 Weeks

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Tech Specifications

Max Operating Temperature
150
Number of Terminals
3
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-220AB
Number of Elements
1
Eccn Code
EAR99
REACH
not_compliant
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STP18N60DM2 Description

STP18N60DM2 Description

The STP18N60DM2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. This device features a 600V drain-to-source voltage rating and can handle a continuous drain current of 12A at 25°C. With a maximum power dissipation of 90W and an operating temperature range up to 150°C, the STP18N60DM2 is well-suited for demanding power electronics applications.

STP18N60DM2 Features

  • 600V Drain-to-Source Voltage (Vdss): Provides high voltage isolation for applications such as power supplies and motor drives.
  • 12A Continuous Drain Current (Id) @ 25°C: Offers robust current handling capabilities for demanding power electronics applications.
  • 90W Maximum Power Dissipation (Tc): Allows for efficient heat management in high-power applications.
  • 150°C Operating Temperature (TJ): Enables operation in harsh thermal environments.
  • 295mOhm Maximum Rds On @ 6A, 10V: Delivers low on-resistance for efficient power switching.
  • 5V Maximum Vgs(th) @ 250µA: Ensures reliable gate threshold voltage for consistent device operation.
  • 20 nC Maximum Gate Charge (Qg) @ 10V: Minimizes switching losses and improves efficiency.
  • 800 pF Maximum Input Capacitance (Ciss) @ 100V: Reduces parasitic effects and enhances high-frequency performance.
  • ±25V Maximum Vgs: Provides a wide gate voltage range for flexible control.
  • ROHS3 Compliant: Meets environmental regulations for safe disposal and recycling.
  • Moisture Sensitivity Level (MSL) 1 (Unlimited): Allows for unlimited storage time before baking is required.
  • Through Hole Mounting Type: Facilitates easy integration into existing designs.

STP18N60DM2 Applications

The STP18N60DM2 is ideal for a variety of power electronics applications, including:

  • Power Supplies: Utilize the high voltage and current ratings for efficient power conversion.
  • Motor Drives: Benefit from the low on-resistance and high current handling capabilities for motor control.
  • Industrial Automation: Leverage the robust performance and thermal management for reliable operation in industrial environments.
  • Automotive Electronics: Take advantage of the high voltage and temperature ratings for automotive power management systems.

Conclusion of STP18N60DM2

The STP18N60DM2 from STMicroelectronics is a versatile and high-performance N-Channel MOSFET designed for demanding power electronics applications. Its combination of high voltage and current ratings, low on-resistance, and robust thermal performance make it an ideal choice for power supplies, motor drives, industrial automation, and automotive electronics. With its unique features and advantages over similar models, the STP18N60DM2 offers a reliable and efficient solution for a wide range of applications.

FAQ

What is STP18N60DM2?
STP18N60DM2 is a Single FETs, MOSFETs from STMicroelectronics. This product page provides its main specifications, pricing information, availability, and inquiry options.
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