STMicroelectronics_STPSC20H12D
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STMicroelectronics
STPSC20H12D

280-STPSC20H12D
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1200 V, 20 A High surge Silicon Carbide Power Schottky Diode
19 Weeks

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Tech Specifications

Max Operating Temperature
175
Number of Terminals
2
Min Operating Temperature
-40
Terminal Position
SINGLE
JEDEC Package Code
TO-220AC
Number of Elements
1
Diode Element Material
SILICON CARBIDE
Diode Type
RECTIFIER DIODE
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STPSC20H12D Description

STPSC20H12D Description

The STPSC20H12D from STMicroelectronics is a high-performance Silicon Carbide (SiC) Schottky diode designed for demanding power electronics applications. With a 1200V reverse voltage (Vr) and 20A average rectified current (Io), this diode delivers superior efficiency and reliability in high-voltage circuits. Its zero reverse recovery time (trr) and low forward voltage drop (1.5V @ 20A) minimize switching losses, making it ideal for high-frequency operations. The 1650pF junction capacitance @ 0V ensures minimal parasitic effects, enhancing performance in fast-switching environments. Packaged in a TO-220AC through-hole format, it is RoHS3 compliant and suitable for industrial applications.

STPSC20H12D Features

  • Zero Recovery Time (trr = 0 ns): Eliminates reverse recovery losses, improving efficiency in high-speed switching.
  • High Voltage & Current Rating: 1200V Vr and 20A Io support robust power handling.
  • Low Forward Voltage (1.5V @ 20A): Reduces conduction losses compared to conventional Si diodes.
  • SiC Technology: Superior thermal conductivity and high-temperature stability vs. silicon-based diodes.
  • Low Leakage Current (120µA @ 1200V): Enhances reliability in high-voltage blocking states.
  • TO-220AC Package: Mechanically robust and compatible with standard mounting processes.

STPSC20H12D Applications

  • Power Factor Correction (PFC): Optimizes efficiency in AC/DC converters.
  • Solar Inverters: High-voltage handling and low losses improve energy harvesting.
  • Switched-Mode Power Supplies (SMPS): Fast switching reduces EMI and improves transient response.
  • Electric Vehicle Charging: SiC technology ensures durability under high-power cycling.
  • Industrial Motor Drives: Zero recovery time enhances performance in high-frequency PWM applications.

Conclusion of STPSC20H12D

The STPSC20H12D sets a benchmark for SiC Schottky diodes with its zero recovery time, high voltage tolerance, and low conduction losses. Its TO-220AC package and industrial-grade reliability make it a top choice for renewable energy, automotive, and power electronics systems. By leveraging SiC technology, it outperforms traditional silicon diodes in efficiency, thermal management, and switching speed, ensuring long-term performance in harsh environments.

FAQ

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The standard lead time for STPSC20H12D is 19 Weeks.
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