The STPSC20H12WL from STMicroelectronics is a high-performance Silicon Carbide (SiC) Schottky diode designed for demanding power electronics applications. With a 1200V reverse voltage (Vr) and 20A average rectified current (Io), it offers superior efficiency and reliability in high-voltage circuits. The diode features zero reverse recovery time (trr = 0 ns), eliminating switching losses and improving thermal performance. Its low forward voltage drop (1.5V @ 20A) and minimal reverse leakage (120 µA @ 1200V) ensure energy efficiency, making it ideal for high-frequency and high-temperature environments. Packaged in DO-247 (TO-247AC) with ECOPACK®2 compliance, it meets RoHS3 and REACH standards, ensuring environmental safety.
The STPSC20H12WL stands out as a high-efficiency SiC Schottky diode, combining zero recovery losses, high voltage tolerance, and low thermal resistance. Its rugged DO-247 package and compliance with environmental standards make it a preferred choice for engineers designing next-generation power systems. Whether in renewable energy, industrial automation, or automotive applications, this diode delivers reliable performance under extreme conditions, reducing system complexity and improving energy efficiency.
Download datasheets and manufacturer documentation for STPSC20H12WL