STMicroelectronics_STPSC2H12B2Y-TR

STMicroelectronics
STPSC2H12B2Y-TR  
Single Diodes

STMicroelectronics
STPSC2H12B2Y-TR
280-STPSC2H12B2Y-TR
Ersa
STMicroelectronics-STPSC2H12B2Y-TR-datasheets-12598970.pdf
DIODE SIL CARBIDE 1.2KV 5A DPAK
In Stock : 3615

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STPSC2H12B2Y-TR Description

STPSC2H12B2Y-TR Description

The STPSC2H12B2Y-TR from STMicroelectronics is a high-performance Silicon Carbide (SiC) Schottky diode designed for demanding power electronics applications. With a 1200V reverse voltage (Vr) and 5A average rectified current (Io), this diode delivers superior efficiency and reliability in high-voltage circuits. Its fast recovery time (<500ns) and low forward voltage drop (1.5V @ 2A) minimize switching losses, making it ideal for high-frequency applications. Packaged in a DPAK (TO-252) surface-mount format with Tape & Reel (TR) delivery, it is optimized for automated assembly processes. The device complies with ROHS3 and REACH environmental standards, ensuring suitability for modern electronics.

STPSC2H12B2Y-TR Features

  • SiC Schottky Technology: Enables high-temperature operation, low leakage (12µA @ 1200V), and superior thermal conductivity.
  • Fast Recovery (<500ns): Reduces switching losses, improving efficiency in high-frequency circuits.
  • Low Capacitance (190pF @ 0V): Enhances performance in high-speed switching applications.
  • High Voltage Rating (1200V): Suitable for industrial and automotive high-power systems.
  • Surface-Mount DPAK Package: Compact and robust, ideal for space-constrained designs.
  • RoHS3 & REACH Compliant: Meets stringent environmental and safety standards.

STPSC2H12B2Y-TR Applications

  • Power Supplies: High-efficiency PFC (Power Factor Correction) and DC-DC converters.
  • Renewable Energy: Solar inverters and wind power systems requiring high-voltage blocking.
  • Electric Vehicles (EV): On-board chargers and battery management systems.
  • Industrial Motor Drives: High-frequency inverters and UPS systems.
  • Telecom & Server PSUs: Where low-loss switching and thermal stability are critical.

Conclusion of STPSC2H12B2Y-TR

The STPSC2H12B2Y-TR stands out for its SiC Schottky technology, offering higher efficiency, faster switching, and better thermal performance compared to traditional silicon diodes. Its 1200V/5A rating and low parasitic capacitance make it a top choice for high-power, high-frequency applications. Whether in EVs, renewable energy, or industrial systems, this diode ensures reliable operation under extreme conditions, backed by STMicroelectronics' quality assurance. Its DPAK packaging further simplifies integration into modern power designs.

Tech Specifications

Unit Weight
Configuration
Product
PPAP
Product Status
Automotive
RoHS
Supplier Package
Package / Case
Peak Forward Voltage (V)
Technology
REACH Status
Voltage - DC Reverse (Vr) (Max)
Peak Non-Repetitive Surge Current (A)
EU RoHS
Maximum Continuous Forward Current (A)
Current - Average Rectified (Io)
Operating Temperature - Junction
Moisture Sensitivity Level (MSL)
Capacitance @ Vr, F
ECCN
Supplier Temperature Grade
Mounting Type
Standard Package Name
Current - Reverse Leakage @ Vr
Pin Count
Mounting
Qualification
SVHC
HTSUS
Package
USHTS
PCB changed
HTS
ECCN (US)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Speed
SVHC Exceeds Threshold
Peak Reverse Current (uA)
Peak Reverse Repetitive Voltage (V)
Material
Package Length
Series
Type
Tab
Voltage - Forward (Vf) (Max) @ If
Part Status
Package Width
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STPSC2H12B2Y-TR Documents

Download datasheets and manufacturer documentation for STPSC2H12B2Y-TR

Ersa STPSC2H12-Y      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa SIC 1200V 06-Apr-2022      

Shopping Guide

Payment Methods
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