The STPSC2H12B2Y-TR from STMicroelectronics is a high-performance Silicon Carbide (SiC) Schottky diode designed for demanding power electronics applications. With a 1200V reverse voltage (Vr) and 5A average rectified current (Io), this diode delivers superior efficiency and reliability in high-voltage circuits. Its fast recovery time (<500ns) and low forward voltage drop (1.5V @ 2A) minimize switching losses, making it ideal for high-frequency applications. Packaged in a DPAK (TO-252) surface-mount format with Tape & Reel (TR) delivery, it is optimized for automated assembly processes. The device complies with ROHS3 and REACH environmental standards, ensuring suitability for modern electronics.
The STPSC2H12B2Y-TR stands out for its SiC Schottky technology, offering higher efficiency, faster switching, and better thermal performance compared to traditional silicon diodes. Its 1200V/5A rating and low parasitic capacitance make it a top choice for high-power, high-frequency applications. Whether in EVs, renewable energy, or industrial systems, this diode ensures reliable operation under extreme conditions, backed by STMicroelectronics' quality assurance. Its DPAK packaging further simplifies integration into modern power designs.
Download datasheets and manufacturer documentation for STPSC2H12B2Y-TR