The STPSC6H065B-TR is a high-performance Silicon Carbide (SiC) Schottky diode from STMicroelectronics, designed for applications requiring high efficiency and fast switching. With a maximum reverse voltage of 650V and an average rectified current of 6A, this diode is ideal for high-power electronics. Its unique features include a reverse recovery time of 0 ns, ensuring minimal power loss during switching, and a low forward voltage drop of 1.75V at 6A, contributing to high efficiency. The diode is RoHS3 compliant, REACH unaffected, and has an unlimited moisture sensitivity level (MSL1), making it suitable for a wide range of applications.
The STPSC6H065B-TR is ideal for a variety of high-power applications, including:
The STPSC6H065B-TR from STMicroelectronics is a high-performance SiC Schottky diode that offers a combination of high efficiency, fast switching, and robust construction. Its unique features, such as a 0 ns reverse recovery time and low forward voltage drop, make it an excellent choice for high-power applications where performance and reliability are paramount. With its compliance with environmental regulations and suitability for a wide range of applications, the STPSC6H065B-TR is a valuable addition to any high-power electronics design.
Download datasheets and manufacturer documentation for STPSC6H065B-TR