STMicroelectronics_STR2N2VH5

STMicroelectronics
STR2N2VH5  
Single FETs, MOSFETs

STMicroelectronics
STR2N2VH5
278-STR2N2VH5
Ersa
STMicroelectronics-STR2N2VH5-datasheets-7230653.pdf
MOSFET N-CH 20V 2.3A SOT23
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    STR2N2VH5 Description

    STR2N2VH5 Description

    The STR2N2VH5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for a wide range of applications requiring efficient power management and control. With a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.3A at 25°C, this device delivers excellent electrical performance. Its low on-resistance (Rds On) of 30mOhm at 2A and 4.5V, combined with a maximum gate-source voltage (Vgs) of ±8V, ensures efficient operation and minimal power loss.

    STR2N2VH5 Features

    • Low On-Resistance: The STR2N2VH5 boasts a low Rds On of 30mOhm at 2A and 4.5V, reducing power dissipation and improving efficiency.
    • High Drain-to-Source Voltage: With a Vdss of 20V, this MOSFET can handle high-voltage applications with ease.
    • Robust Current Handling: Capable of handling continuous drain currents up to 2.3A at 25°C, making it suitable for demanding power management tasks.
    • Low Gate Charge: A maximum gate charge (Qg) of 4.6nC at 4.5V reduces switching losses and improves overall efficiency.
    • Surface Mount Packaging: The SOT23 package allows for easy integration into surface-mount applications, reducing footprint and improving board layout.
    • Compliance with Industry Standards: The STR2N2VH5 is REACH unaffected, RoHS3 compliant, and classified as EAR99, ensuring compliance with international regulations.

    STR2N2VH5 Applications

    The STR2N2VH5 is ideal for a variety of applications where high efficiency and reliability are critical:

    • Power Management: Due to its high voltage and current ratings, this MOSFET is well-suited for power management applications in consumer electronics, industrial equipment, and automotive systems.
    • Motor Control: The low on-resistance and high current handling make it an excellent choice for motor control applications, providing efficient power delivery and precise control.
    • Switching Regulators: Its low gate charge and high switching speeds make the STR2N2VH5 ideal for use in switching regulators, where fast transient response and low power loss are essential.

    Conclusion of STR2N2VH5

    The STR2N2VH5 from STMicroelectronics is a versatile and high-performance N-Channel MOSFET that offers a combination of low on-resistance, high voltage and current ratings, and compliance with industry standards. Its unique features make it an excellent choice for a wide range of applications, including power management, motor control, and switching regulators. With its robust performance and reliability, the STR2N2VH5 is a valuable addition to any electronics design requiring efficient power control and management.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    Maximum Drain Source Resistance (MOhm)
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Transistor Polarity
    Package Length
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STR2N2VH5 Documents

    Download datasheets and manufacturer documentation for STR2N2VH5

    Ersa STR2N2VH5      
    Ersa STR2N2VH5      

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