The STR2N2VH5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for a wide range of applications requiring efficient power management and control. With a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.3A at 25°C, this device delivers excellent electrical performance. Its low on-resistance (Rds On) of 30mOhm at 2A and 4.5V, combined with a maximum gate-source voltage (Vgs) of ±8V, ensures efficient operation and minimal power loss.
STR2N2VH5 Features
Low On-Resistance: The STR2N2VH5 boasts a low Rds On of 30mOhm at 2A and 4.5V, reducing power dissipation and improving efficiency.
High Drain-to-Source Voltage: With a Vdss of 20V, this MOSFET can handle high-voltage applications with ease.
Robust Current Handling: Capable of handling continuous drain currents up to 2.3A at 25°C, making it suitable for demanding power management tasks.
Low Gate Charge: A maximum gate charge (Qg) of 4.6nC at 4.5V reduces switching losses and improves overall efficiency.
Surface Mount Packaging: The SOT23 package allows for easy integration into surface-mount applications, reducing footprint and improving board layout.
Compliance with Industry Standards: The STR2N2VH5 is REACH unaffected, RoHS3 compliant, and classified as EAR99, ensuring compliance with international regulations.
STR2N2VH5 Applications
The STR2N2VH5 is ideal for a variety of applications where high efficiency and reliability are critical:
Power Management: Due to its high voltage and current ratings, this MOSFET is well-suited for power management applications in consumer electronics, industrial equipment, and automotive systems.
Motor Control: The low on-resistance and high current handling make it an excellent choice for motor control applications, providing efficient power delivery and precise control.
Switching Regulators: Its low gate charge and high switching speeds make the STR2N2VH5 ideal for use in switching regulators, where fast transient response and low power loss are essential.
Conclusion of STR2N2VH5
The STR2N2VH5 from STMicroelectronics is a versatile and high-performance N-Channel MOSFET that offers a combination of low on-resistance, high voltage and current ratings, and compliance with industry standards. Its unique features make it an excellent choice for a wide range of applications, including power management, motor control, and switching regulators. With its robust performance and reliability, the STR2N2VH5 is a valuable addition to any electronics design requiring efficient power control and management.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STR2N2VH5 Documents
Download datasheets and manufacturer documentation for STR2N2VH5
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
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