STMicroelectronics_STS8C5H30L
original

STMicroelectronics
STS8C5H30L

289-STS8C5H30L
N/P-Ch 30V 8A/5A 22mR SOIC Power MOSFET

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Tech Specifications

Package / Case
SOIC
Continuous Drain Current (ID)
5.4A
Current Rating
8A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
22mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
22MR
Fall Time
35ns
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STS8C5H30L Description

STS8C5H30L Description

The STS8C5H30L from STMicroelectronics is a high-performance N/P-channel MOSFET array designed for power management applications. Part of the STripFET™ III series, it combines low on-resistance (22mOhm @ 4A, 10V) with a 30V drain-to-source voltage (Vdss) rating, making it suitable for low-voltage, high-efficiency switching. The device operates at a maximum junction temperature of 150°C (TJ) and features a logic-level gate, ensuring compatibility with modern control circuits. Packaged in an 8SOIC and available in Tape & Reel (TR), it is optimized for automated assembly.

STS8C5H30L Features

  • Low Rds(On): 22mOhm (max) at 10V Vgs, minimizing conduction losses.
  • High Current Handling: Supports 8A (N-channel) / 5.4A (P-channel) continuous drain current at 25°C.
  • Fast Switching: Low gate charge (10nC @ 5V) and input capacitance (857pF @ 25V) enhance efficiency in high-frequency applications.
  • Logic-Level Gate: Compatible with 5V drive signals, simplifying interface design.
  • Robust Packaging: Surface-mount 8SOIC with MSL 1 (Unlimited) moisture sensitivity, ideal for industrial environments.
  • Compliance: ROHS3 and REACH Unaffected, meeting global environmental standards.

STS8C5H30L Applications

  • DC-DC Converters: Efficient power conversion in portable devices and POL modules.
  • Motor Control: Low Rds(On) reduces heat dissipation in brushed/brushless motor drivers.
  • Load Switching: Ideal for battery management systems (BMS) and power distribution.
  • Automotive Electronics: Suitable for auxiliary systems requiring high reliability.
  • Consumer Electronics: Used in power supplies, LED drivers, and USB charging circuits.

Conclusion of STS8C5H30L

The STS8C5H30L excels in low-voltage, high-current applications, offering a balance of low conduction losses, fast switching, and compact packaging. Its logic-level gate and STripFET™ III technology provide a competitive edge over similar MOSFETs, particularly in space-constrained designs. While marked obsolete, it remains a viable choice for legacy systems or applications prioritizing cost-effective, high-efficiency solutions. Engineers should evaluate alternative STripFET™ IV/V series for newer designs.

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