The STT13005D from STMicroelectronics is a high-voltage NPN bipolar junction transistor (BJT) designed for demanding power-switching applications. Housed in a SOT32-3 (TO-126) through-hole package, it offers a robust 400V collector-emitter breakdown voltage (VCE) and a 2A continuous collector current (IC). With a 45W maximum power dissipation, this transistor is engineered for efficiency in high-power circuits. Its low collector cutoff current (250µA max) and DC current gain (hFE ≥ 10 @ 500mA, 5V) ensure reliable performance in switching and amplification roles.
The STT13005D excels in high-voltage, medium-power applications, offering a balance of ruggedness, efficiency, and thermal stability. Its TO-126 package ensures easy integration into through-hole designs, while its high gain and low saturation voltage minimize losses. Though obsolete, it remains a viable option for engineers maintaining or upgrading legacy systems requiring 400V switching capability. For modern designs, consider newer alternatives, but the STT13005D’s reliability in demanding conditions ensures its enduring relevance.
Download datasheets and manufacturer documentation for STT13005D