STMicroelectronics

STTH812G-TR

STTH812G-TR is a high-power, high-efficiency gallium nitride (GaN) transistor from STMicroelectronics. It is designed for use in high-frequency power conversion applications, such as in power adapters, chargers, and other power supply systems.

Description:

The STTH812G-TR is a normally-off GaN transistor that operates at a voltage of 650V and has a continuous drain current rating of 8A. It is available in a TO-247AC package, which is suitable for high-power applications.

Features:

• High power density: The STTH812G-TR offers high power density, which allows for smaller and more efficient power conversion systems.
• High efficiency: The GaN transistor has a high efficiency rating, which helps to reduce power losses and improve overall system performance.
• Low switching losses: The STTH812G-TR has low switching losses, which helps to improve the overall efficiency of the power conversion system.
• High-speed operation: The GaN transistor can operate at high frequencies, which allows for smaller and lighter power conversion systems.

Applications:

The STTH812G-TR is suitable for use in a variety of high-power applications, including:

• Power adapters and chargers
• Power supply systems for industrial and automotive applications
• Renewable energy systems, such as solar power inverters
• High-efficiency power conversion systems for telecommunications and computing equipment

Overall, the STTH812G-TR is a high-performance GaN transistor that offers high power density, high efficiency, and low switching losses, making it an ideal choice for a wide range of power conversion applications.