STMicroelectronics_STTH8S06FP
original

STMicroelectronics
STTH8S06FP

280-STTH8S06FP
PDF Datasheet
600 V, 8 A Ultrafast Boost Diode
15 weeks

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Tech Specifications

Average Rectified Current
8A
Package/Case
TO-220-2
Forward Current
8A
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Max Repetitive Reverse Voltage (Vrrm)
600V
Max Reverse Current
20uA
Max Reverse Voltage (DC)
600V
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STTH8S06FP Description

STTH8S06FP is a high-performance, surface-mount, P沟道MOSFET(金属氧化物半导体场效应晶体管)由STMicroelectronics生产。以下是有关STTH8S06FP的描述,包括其特点和应用: 描述: STTH8S06FP是一款P沟道MOSFET,采用表面贴装封装。它设计用于高功率应用,能够处理高电压和电流。STTH8S06FP具有低导通电阻和快速开关时间,使其非常适合要求高效率和快速响应的应用。 特点: - P沟道MOSFET - 表面贴装封装 - 高电压和电流处理能力 - 低导通电阻 - 快速开关时间 应用: STTH8S06FP可用于各种高功率应用,包括: 1. 电源转换:STTH8S06FP可用于开关电源,如SMPS(开关模式电源)和DC-DC转换器。 2. 电机控制:该MOSFET可用于控制工业电机的速度和方向,如机器人、输送机和泵。 3. 电动汽车:STTH8S06FP可用于电动汽车的牵引逆变器和车载充电器。 4. 太阳能逆变器:该MOSFET可用于将太阳能电池板产生的直流电转换为交流电。 5. 电池管理:STTH8S06FP可用于电池管理系统,如BMS(电池管理系统)和充电器。 6. 工业自动化:该MOSFET可用于各种工业自动化应用,如PLC(可编程逻辑控制器)和传感器。 总之,STTH8S06FP是一款高性能的P沟道MOSFET,具有低导通电阻和快速开关时间,非常适合高功率应用。其表面贴装封装和高电压和电流处理能力使其成为电源转换、电机控制、电动汽车、太阳能逆变器、电池管理和工业自动化等各种应用的理想选择。

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Availability (In Stock : 156 )
Quantity Unit Price Ext. Price
1+ $0.63085 $0.63
10+ $0.50915 $5.09
30+ $0.45600 $13.68
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Unit Price $0.63085
Subtotal $0.63
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