STMicroelectronics_STY100NM60N
original

STMicroelectronics
STY100NM60N

278-STY100NM60N
PDF Datasheet
600V N-CH MOSFET, 98A, 29mR RdsOn, TO-247
26 Weeks

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Tech Specifications

Package/Case
TO-247-3
Continuous Drain Current (ID)
98A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
29mR
Drain to Source Voltage (Vdss)
600V
Gate to Source Voltage (Vgs)
25V
Height
20.3mm
Input Capacitance
9.6nF
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STY100NM60N Description

STY100NM60N Description

The STY100NM60N from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. With a 600V drain-to-source voltage (Vdss) and 98A continuous drain current (Id), it delivers robust power handling in a compact MAX247™ package. Utilizing MDmesh™ II technology, this MOSFET achieves an exceptionally low on-resistance (Rds(on)) of 29mOhm at 49A, 10V, ensuring high efficiency and minimal conduction losses. Its 625W (Tc) maximum power dissipation and 25V gate-source voltage (Vgs) tolerance make it suitable for high-power switching applications.

STY100NM60N Features

  • Advanced MDmesh™ II Technology: Enhances switching efficiency and reduces losses.
  • Low Gate Charge (Qg): 330nC @ 10V enables fast switching and reduced drive losses.
  • High Input Capacitance (Ciss): 9600pF @ 50V ensures stable performance in high-frequency circuits.
  • Robust Thermal Performance: 625W (Tc) power dissipation supports high-load applications.
  • Wide Drive Voltage Range: Optimized for 10V gate drive, balancing Rds(on) and switching speed.
  • Reliable Packaging: MAX247™ through-hole design ensures mechanical durability and heat dissipation.
  • Compliance: ROHS3 and REACH compliant, meeting environmental and safety standards.

STY100NM60N Applications

  • Switched-Mode Power Supplies (SMPS): High efficiency in AC-DC and DC-DC converters.
  • Motor Drives and Inverters: Reliable performance in industrial and automotive motor control.
  • Renewable Energy Systems: Solar inverters and wind power converters benefit from its high voltage tolerance.
  • Uninterruptible Power Supplies (UPS): Ensures stable power delivery in critical backup systems.
  • High-Frequency Switching Circuits: Low gate charge and capacitance enable efficient high-speed operation.

Conclusion of STY100NM60N

The STY100NM60N stands out as a high-efficiency, high-voltage MOSFET ideal for power electronics requiring low Rds(on), fast switching, and thermal resilience. Its MDmesh™ II technology and MAX247™ packaging make it superior to conventional MOSFETs in demanding applications like SMPS, motor drives, and renewable energy systems. With STMicroelectronics' proven reliability and compliance with industry standards, this MOSFET is a top choice for engineers designing next-generation power solutions.

FAQ

What is the mounting type of STY100NM60N?
STY100NM60N uses a Through Hole mounting style based on the listed product specifications.
What voltage specification is listed for STY100NM60N?
Does STY100NM60N have quantity-based pricing?
What is the standard lead time for STY100NM60N?
What package or case is STY100NM60N available in?
Availability (In Stock : 6 )
Quantity Unit Price Ext. Price
1+ $17.61943 $17.62
10+ $17.09657 $170.97
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