STMicroelectronics

TN815-800B-TR

The TN815-800B-TR is a high-frequency, high-power transistor from STMicroelectronics. It is designed for use in a variety of applications, including RF power amplifiers, radar systems, and radio communication equipment.

Description:

The TN815-800B-TR is a gallium nitride (GaN) transistor that operates at frequencies up to 8 GHz. It is a high-power device, capable of delivering up to 800 watts of output power. The transistor is housed in a ceramic package with a copper base for efficient heat dissipation.

Features:

• High-frequency operation up to 8 GHz
• High output power of up to 800 watts
• Gallium nitride (GaN) technology for high efficiency and low distortion
• Ceramic package with copper base for excellent thermal performance
• Wide supply voltage range of 28V to 50V
• Low harmonic distortion and high linearity
• RoHS compliant

Applications:

The TN815-800B-TR is suitable for a wide range of applications, including:

• RF power amplifiers for base stations and repeaters
• Radar systems for surveillance and detection
• Radio communication equipment for military and commercial use
• Electronic warfare systems for signal jamming and interception
• High-power transmitters for broadcasting and satellite communication

The TN815-800B-TR's high-frequency operation, high output power, and excellent thermal performance make it an ideal choice for demanding applications that require high efficiency and reliability. Its wide supply voltage range and low harmonic distortion also make it suitable for use in a variety of different systems and environments.