STMicroelectronics

VNB20N07TR-E

The VNB20N07TR-E is a high-power N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a wide range of applications, including power switching, motor control, and power management systems.

Description:

The VNB20N07TR-E is a high-power N-channel MOSFET with a drain-source voltage (VDS) of 70V and a continuous drain current (ID) of 20A. It features a low on-state resistance (RDS(on)) of 4.6 mΩ max, which helps to minimize power dissipation and improve efficiency in power switching applications.

Features:

1. High drain-source voltage (VDS) of 70V
2. Continuous drain current (ID) of 20A
3. Low on-state resistance (RDS(on)) of 4.6 mΩ max
4. High switching speed and low switching losses
5. Integrated body diode for efficient energy conversion
6. Suitable for use in high-temperature environments

Applications:

The VNB20N07TR-E is suitable for a wide range of applications, including:

1. Power switching and control in industrial and automotive systems
2. Motor control and drive systems for electric vehicles, robotics, and industrial automation
3. Power management systems for renewable energy applications, such as solar power inverters and battery management systems
4. High-efficiency power supplies and converters for consumer electronics and telecommunications equipment
5. DC-DC converters and voltage regulators for computer and server power systems

In summary, the VNB20N07TR-E is a high-power N-channel MOSFET that offers excellent performance in power switching and control applications. Its high drain-source voltage, continuous drain current, and low on-state resistance make it an ideal choice for a wide range of power management and motor control applications.