The VNB35N07TR-E is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of applications, including motor control, power management, and power conversion systems.
Description:
The VNB35N07TR-E is an N-channel enhancement mode field-effect transistor (MOSFET) with a drain-source voltage (VDS) of -700V and a continuous drain current (ID) of 7.4A. It features a low on-state resistance (RDS(on)) of 6.5mΩ maximum, which helps to minimize power dissipation and improve efficiency in switching applications.
Features:
- High voltage operation: The VNB35N07TR-E can handle high voltages up to -700V, making it suitable for use in high voltage applications.
- Low on-state resistance: The low RDS(on) of 6.5mΩ maximum helps to minimize power dissipation and improve efficiency in switching applications.
- High input impedance: The MOSFET has a high input impedance, which allows it to be easily driven by a variety of control circuits.
- Logic level compatible: The VNB35N07TR-E is compatible with logic level control signals, making it easy to integrate into digital systems.
- Avalanche energy capable: The MOSFET is designed to withstand high energy pulses during avalanche conditions, providing additional protection for the device.
Applications:
- Motor control: The VNB35N07TR-E is suitable for use in motor control applications, such as brushless DC motor control and stepper motor control.
- Power management: The MOSFET can be used in power management applications, such as battery management systems and power supply circuits.
- Power conversion: The VNB35N07TR-E is suitable for use in power conversion applications, such as DC-DC converters and AC-DC converters.
- Industrial control: The MOSFET can be used in industrial control applications, such as robotic control and factory automation systems.
- Automotive applications: The VNB35N07TR-E can be used in automotive applications, such as electric power steering and window control systems.
Overall, the VNB35N07TR-E is a versatile and high-performance MOSFET that is well-suited for a variety of high voltage switching and power management applications. Its low on-state resistance and high input impedance make it an efficient and easy-to-use device for a wide range of applications.