STMicroelectronics

VNS1NV04DPTR-E  

Power Distribution Switches, Load Drivers

The VNS1NV04DPTR-E is a high-performance automotive-grade power MOSFET from STMicroelectronics. It is designed to meet the stringent requirements of automotive applications, including high temperature operation, low on-resistance, and high switching speed.

Description:

The VNS1NV04DPTR-E is an N-channel power MOSFET with a drain-source voltage (VDS) of up to 40V and a continuous drain current (ID) of up to 37A. It is available in a Power Transistor (D2PAK) package, which provides excellent thermal performance and ease of use in automotive applications.

Features:

• High temperature operation: The VNS1NV04DPTR-E is designed to operate in the harsh automotive environment, with a maximum junction temperature of up to 175°C.
• Low on-resistance: The MOSFET has a low on-resistance (RDS(on)) of 4.5mΩ max, which helps to minimize power dissipation and improve efficiency in automotive applications.
• High switching speed: The VNS1NV04DPTR-E has a fast switching time of 45ns max for turn-on and 95ns max for turn-off, which helps to reduce switching losses and improve overall system efficiency.
• Avalanche energy withstand capability: The MOSFET has a high avalanche energy withstand capability of 200mJ max, which helps to protect against transient voltage spikes in automotive applications.

Applications:

The VNS1NV04DPTR-E is suitable for a wide range of automotive applications, including:

• Motor control: The MOSFET's high current capability and fast switching speed make it well-suited for use in motor control applications, such as electric power steering, window motors, and windshield wipers.
• LED lighting: The VNS1NV04DPTR-E can be used in automotive LED lighting applications, such as headlights, taillights, and interior lighting, to provide efficient and reliable power switching.
• Battery management: The MOSFET can be used in battery management systems for electric and hybrid vehicles, where high efficiency and reliability are critical.
• Protection circuits: The VNS1NV04DPTR-E can be used in automotive protection circuits, such as overcurrent and overvoltage protection, to help ensure the safe and reliable operation of automotive systems.

Overall, the VNS1NV04DPTR-E is a high-performance power MOSFET that is well-suited for a wide range of automotive applications, thanks to its high temperature operation, low on-resistance, and high switching speed.

VNS1NV04DPTR-E Documents

Download datasheets and manufacturer documentation for VNS1NV04DPTR-E

PCN Assembly/Origin :

Mult Dev 21/Dec/2022      

Datasheets :

VNS1NV04DP-E      

PCN Packaging :

Material Barrier Bag 17/Dec/2020       Mult Dev Label Chgs 29/Oct/2020      

Other Related Documents :

VNS1NV04DP-E View All Specifications      

HTML Datasheet :

VNS1NV04DP-E