STMicroelectronics_VNS1NV04DPTR-E
original

STMicroelectronics
VNS1NV04DPTR-E

726-VNS1NV04DPTR-E
PDF Datasheet
45V 1.7A SOIC 2-Ch Low-Side Driver IC
26 Weeks

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Tech Specifications

Package/Case
SOIC
Continuous Drain Current (ID)
1.7A
Current
1.7A
Drain to Source Breakdown Voltage
45V
Drain to Source Resistance
250mR
Drain to Source Voltage (Vdss)
45V
Fall Time
200ns
Fault Protection
Over Voltage, Over Temperature
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VNS1NV04DPTR-E Description

The VNS1NV04DPTR-E is a high-performance automotive-grade power MOSFET from STMicroelectronics. It is designed to meet the stringent requirements of automotive applications, including high temperature operation, low on-resistance, and high switching speed.

Description:

The VNS1NV04DPTR-E is an N-channel power MOSFET with a drain-source voltage (VDS) of up to 40V and a continuous drain current (ID) of up to 37A. It is available in a Power Transistor (D2PAK) package, which provides excellent thermal performance and ease of use in automotive applications.

Features:

  • High temperature operation: The VNS1NV04DPTR-E is designed to operate in the harsh automotive environment, with a maximum junction temperature of up to 175°C.
  • Low on-resistance: The MOSFET has a low on-resistance (RDS(on)) of 4.5mΩ max, which helps to minimize power dissipation and improve efficiency in automotive applications.
  • High switching speed: The VNS1NV04DPTR-E has a fast switching time of 45ns max for turn-on and 95ns max for turn-off, which helps to reduce switching losses and improve overall system efficiency.
  • Avalanche energy withstand capability: The MOSFET has a high avalanche energy withstand capability of 200mJ max, which helps to protect against transient voltage spikes in automotive applications.

Applications:

The VNS1NV04DPTR-E is suitable for a wide range of automotive applications, including:

  • Motor control: The MOSFET's high current capability and fast switching speed make it well-suited for use in motor control applications, such as electric power steering, window motors, and windshield wipers.
  • LED lighting: The VNS1NV04DPTR-E can be used in automotive LED lighting applications, such as headlights, taillights, and interior lighting, to provide efficient and reliable power switching.
  • Battery management: The MOSFET can be used in battery management systems for electric and hybrid vehicles, where high efficiency and reliability are critical.
  • Protection circuits: The VNS1NV04DPTR-E can be used in automotive protection circuits, such as overcurrent and overvoltage protection, to help ensure the safe and reliable operation of automotive systems.

Overall, the VNS1NV04DPTR-E is a high-performance power MOSFET that is well-suited for a wide range of automotive applications, thanks to its high temperature operation, low on-resistance, and high switching speed.

FAQ

Are there related or alternative parts for VNS1NV04DPTR-E?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
Does VNS1NV04DPTR-E have quantity-based pricing?
What package or case is VNS1NV04DPTR-E available in?
What voltage specification is listed for VNS1NV04DPTR-E?
What is the standard lead time for VNS1NV04DPTR-E?
Availability (In Stock : 35124 )
Quantity Unit Price Ext. Price
10+ $0.84515 $8.45
30+ $0.74743 $22.42
100+ $0.65143 $65.14
500+ $0.59315 $296.57
1000+ $0.56228 $562.28
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