Taiwan Semiconductor_1N5406GHB0G
original

Taiwan Semiconductor
1N5406GHB0G

280-1N5406GHB0G
Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,

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Tech Specifications

Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
AXIAL
JEDEC Package Code
DO-201AD
Number of Elements
1
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
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1N5406GHB0G Description

Diode 600 V 3A Through Hole DO-201AD

FAQ

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1N5406GHB0G is available in the DO-201AD package / case.
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