Taiwan Semiconductor_1N5818HB0G
original

Taiwan Semiconductor
1N5818HB0G

280-1N5818HB0G
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN

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Tech Specifications

Max Operating Temperature
125
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
AXIAL
JEDEC Package Code
DO-204AL
Number of Elements
1
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
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1N5818HB0G Description

Diode 30 V 1A Through Hole DO-204AL (DO-41)

FAQ

What voltage specification is listed for 1N5818HB0G?
The listed voltage-related specification for 1N5818HB0G is 30.
Are there related or alternative parts for 1N5818HB0G?
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What is 1N5818HB0G?
What operating temperature range does 1N5818HB0G support?
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