Taiwan Semiconductor_BC847C
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Taiwan Semiconductor
BC847C  
Single Bipolar Transistors

BC847C
276-BC847C
SOT-23, 50V, 0.1A, NPN BIPOLAR T
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BC847C Description

BC847C Description

The BC847C from Taiwan Semiconductor Corporation is a high-performance NPN bipolar junction transistor (BJT) designed for surface-mount applications. Packaged in a compact SOT-23 form factor, it offers a collector-emitter voltage (Vce) rating of 45V and a maximum collector current (Ic) of 100mA, making it suitable for low-power amplification and switching tasks. With a transition frequency of 100MHz, it delivers excellent high-frequency performance, while its low Vce saturation voltage (500mV @ 5mA, 100mA) ensures efficient switching operation. The device is RoHS3 compliant and adheres to REACH and EAR99 regulations, ensuring environmental and export compliance.

BC847C Features

  • High DC Current Gain (hFE): Minimum 420 @ 2mA, 5V, ensuring reliable amplification in signal processing circuits.
  • Low Leakage Current: Collector cutoff current (ICBO) as low as 100nA, enhancing energy efficiency.
  • Compact & Reliable: SOT-23 package enables high-density PCB designs while maintaining robustness.
  • Wide Operating Range: Supports -55°C to +150°C junction temperature, suitable for industrial environments.
  • Low Saturation Voltage: 500mV @ 5mA, 100mA, optimizing power efficiency in switching applications.
  • High Transition Frequency: 100MHz enables stable performance in RF and high-speed circuits.

BC847C Applications

The BC847C is ideal for:

  • Signal Amplification: Audio preamps, sensor interfaces, and low-noise analog circuits due to its high hFE.
  • Switching Circuits: Relay drivers, LED drivers, and load switches benefiting from low Vce(sat).
  • High-Frequency Applications: Oscillators, RF modules, and communication systems leveraging its 100MHz transition frequency.
  • Portable Electronics: Battery-operated devices where low leakage and compact size are critical.
  • Automotive & Industrial Systems: Robust performance in harsh environments due to wide temperature tolerance.

Conclusion of BC847C

The BC847C stands out as a versatile, high-performance NPN transistor with excellent gain, low saturation voltage, and high-frequency capability. Its compact SOT-23 package, compliance with environmental standards, and broad operating range make it a preferred choice for amplification, switching, and RF applications across consumer, industrial, and automotive sectors. Engineers favor this model for its reliability, efficiency, and cost-effectiveness in space-constrained designs.

Tech Specifications

Operating Temperature
Frequency - Transition
Current - Collector (Ic) (Max)
Vce Saturation (Max) @ Ib, Ic
ECCN
Mounting Type
Product Status
Voltage - Collector Emitter Breakdown (Max)
Supplier Device Package
Series
Transistor Type
Package / Case
Power - Max
REACH Status
Mfr
Current - Collector Cutoff (Max)
HTSUS
Package
RoHS Status
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Category
Configuration
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
PPAP
Maximum Power Dissipation (mW)
Maximum Base Emitter Saturation Voltage (V)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Package Height
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Maximum Collector Base Voltage (V)
Maximum Emitter Base Voltage (V)
Package Length
Standard Package Name
Pin Count
Mounting
Type
Minimum DC Current Gain
Operating Junction Temperature (°C)
Maximum DC Collector Current (A)
Lead Shape
Part Status
Package Width
Maximum Collector Cut-Off Current (nA)

BC847C Documents

Download datasheets and manufacturer documentation for BC847C

Ersa BC846A/B, BC847A/B/C, BC848A/B/C      
Ersa Taiwan Semi RoHS       Taiwan Semi REACH      

Shopping Guide

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