Taiwan Semiconductor_BZT55C30
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Taiwan Semiconductor
BZT55C30

287-BZT55C30
BZT55C30

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ISO9001
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Tech Specifications

Package/Case
MELF
Height
1.8mm
Impedance
80R
Length
3.7mm
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Max Reverse Leakage Current
100nA
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BZT55C30 Description

Zener Diode 30 V 500 mW ±5% Surface Mount QMMELF

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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