Taiwan Semiconductor_BZT55C3V9
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Taiwan Semiconductor
BZT55C3V9

287-BZT55C3V9
BZT55C3V9

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Package/Case
MELF
Height
1.8mm
Impedance
85R
Length
3.7mm
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Max Reverse Leakage Current
2uA
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BZT55C3V9 Description

Zener Diode 3.9 V 500 mW ±5% Surface Mount QMMELF

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