Texas Instruments_2N7001TQDCKRQ1
original

Texas Instruments
2N7001TQDCKRQ1

732-2N7001TQDCKRQ1
PDF Datasheet
Automotive 1-bit dual-supply buffered voltage signal translator 5-SC70 -40 to 125
6 Weeks

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Tech Specifications

Max Operating Temperature
125
Number of Terminals
5
Min Operating Temperature
-40
Terminal Position
DUAL
JEDEC Package Code
R-PDSO-G5
Width
1.25
Length
2
Number of Functions
1
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2N7001TQDCKRQ1 Description

The 2N7001TQDCKRQ1 is a low-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. It is designed for a wide range of applications, including low-voltage, low-power switching and amplification tasks.

Description:

The 2N7001TQDCKRQ1 is a small-signal MOSFET that features a low threshold voltage, high input impedance, and fast switching capabilities. It is available in a tiny SC-70 package, making it suitable for compact and space-constrained applications.

Features:

  1. Low threshold voltage (Vth): 2.0 to 2.5 V, which makes it suitable for low-voltage applications.
  2. High input impedance: The MOSFET has a high input impedance, making it ideal for use in high-impedance circuits.
  3. Fast switching: The 2N7001TQDCKRQ1 has a low on-resistance (RDS(on)) and a high switching speed, making it suitable for high-frequency applications.
  4. Small package: The device is available in a compact SC-70 package, which is ideal for space-constrained applications.
  5. Wide operating temperature range: The MOSFET can operate in temperatures ranging from -65°C to +200°C, making it suitable for various environments.

Applications:

  1. Low-voltage switching applications: The 2N7001TQDCKRQ1 is suitable for low-voltage switching applications, such as switching regulators and DC-DC converters.
  2. Amplification: The high input impedance and low threshold voltage make it suitable for use in amplifier circuits.
  3. Load switching: The MOSFET can be used for switching high-current loads in applications like motor control and LED driving.
  4. Battery protection: The 2N7001TQDCKRQ1 can be used in battery protection circuits to prevent over-discharge and over-current situations.
  5. Portable devices: Due to its low power consumption and small package size, the MOSFET is suitable for use in portable electronic devices, such as smartphones, tablets, and wearables.

In summary, the 2N7001TQDCKRQ1 is a versatile low-voltage N-channel MOSFET that offers a combination of low threshold voltage, high input impedance, and fast switching capabilities. Its compact SC-70 package and wide operating temperature range make it suitable for a variety of applications, including low-voltage switching, amplification, load switching, battery protection, and portable devices.

FAQ

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The standard lead time for 2N7001TQDCKRQ1 is 6 Weeks.
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Availability (In Stock : 1255 )
Quantity Unit Price Ext. Price
1+ $0.55885 $0.56
10+ $0.44400 $4.44
30+ $0.39428 $11.83
100+ $0.33257 $33.26
500+ $0.27600 $138.00
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Unit Price $0.55885
Subtotal $0.56
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