Texas Instruments_BQ4013LYMA-70N
original

Texas Instruments
BQ4013LYMA-70N

774-BQ4013LYMA-70N
PDF Datasheet
128KX8 NON-VOLATILE SRAM MODULE, 70ns, PDMA32, ROHS COMPLIANT, PLASTIC, DIP-32

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Tech Specifications

Access Time
70ns
Access Time-Max
70ns
Data Bus Width
8b
Density
1Mb
Interface
Parallel
Lead Free
Contains Lead
Max Operating Temperature
85°C
Max Supply Voltage
3.6V
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BQ4013LYMA-70N Description

BQ4013LYMA-70N Description

The BQ4013LYMA-70N is a 1Mbit Non-Volatile Static Random Access Memory (NVSRAM) IC designed by Texas Instruments. This memory IC chip is packaged in a Through Hole 32DIP format and offers a parallel memory interface. It features a memory organization of 128K x 8, providing a total memory size of 1Mbit. The BQ4013LYMA-70N operates within a supply voltage range of 3V to 3.6V and boasts an access time of 70 nanoseconds. This chip is designed for applications requiring fast read and write operations, making it suitable for high-speed data processing environments.

BQ4013LYMA-70N Features

  • Memory Interface: Parallel interface for efficient data transfer.
  • Memory Organization: 128K x 8, providing a total memory size of 1Mbit.
  • Access Time: 70 ns, ensuring rapid data retrieval and storage.
  • Write Cycle Time: 70 ns for both word and page operations, maintaining high-speed performance.
  • Supply Voltage: 3V to 3.6V, ensuring compatibility with a range of power supplies.
  • Mounting Type: Through Hole, suitable for applications requiring robust mechanical stability.
  • Package: Tube, offering protection during handling and storage.
  • Moisture Sensitivity Level (MSL): Level 1 (Unlimited), making it suitable for various environmental conditions.
  • Compliance: ROHS3 Compliant and REACH Unaffected, ensuring environmental and regulatory compliance.

BQ4013LYMA-70N Applications

The BQ4013LYMA-70N is ideal for applications that require fast, reliable, and non-volatile memory solutions. Its 70 ns access and write cycle times make it suitable for high-speed data processing tasks. The parallel memory interface allows for efficient data transfer, making it a preferred choice for systems where data integrity and speed are critical. Some specific use cases include:

  • Embedded Systems: For storing critical system parameters and data that need to be retained even when power is lost.
  • Telecommunications: In routers and switches where fast access to configuration data is essential.
  • Industrial Control Systems: For maintaining operational parameters and logs in harsh industrial environments.
  • Medical Devices: For storing patient data and device settings that must be preserved across power cycles.

Conclusion of BQ4013LYMA-70N

The BQ4013LYMA-70N from Texas Instruments is a robust and high-performance NVSRAM IC that offers significant advantages over similar models. Its fast access and write cycle times, combined with a parallel memory interface, make it an excellent choice for applications requiring rapid data processing and non-volatile storage. Despite being marked as obsolete, the BQ4013LYMA-70N remains a reliable option for legacy systems and new designs where its specific features are required. Its compliance with environmental regulations and robust mechanical design further enhance its suitability for a wide range of applications.

FAQ

Are there related or alternative parts for BQ4013LYMA-70N?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What voltage specification is listed for BQ4013LYMA-70N?
What operating temperature range does BQ4013LYMA-70N support?
What package or case is BQ4013LYMA-70N available in?
Does BQ4013LYMA-70N have quantity-based pricing?
Availability (In Stock : 482 )
Quantity Unit Price Ext. Price
9+ $29.52400 $265.72
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