Texas Instruments_DRA716BGGCBDQ1
original

Texas Instruments
DRA716BGGCBDQ1

694-DRA716BGGCBDQ1
PDF Datasheet
IC MPU DRA71X CORTEX-A15 538BGA

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Tech Specifications

Core Processor
ARM® Cortex®-A15
Product Status
Active
Supplier Device Package
538-FCBGA (17x17)
Package / Case
538-LFBGA, FCBGA
Additional Interfaces
1-Wire®, CANbus, DMA, Ethernet, I2C, IrDA, McASP, McSPI, MMC/SD/SDIO, SPI, UART/USART, USB
Number of Cores/Bus Width
1 Core, 32-Bit
Mfr
Texas Instruments
Graphics Acceleration
Yes
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DRA716BGGCBDQ1 Description

The Texas Instruments DRA716BGGCBDQ1 is a high-performance, high-frequency GaN (Gallium Nitride) power amplifier designed for use in various wireless communication systems. This device offers excellent linearity, efficiency, and output power, making it an ideal choice for a wide range of applications.

Description:

The DRA716BGGCBDQ1 is a compact, surface-mount module that features a GaN transistor and integrated matching components. It is designed to operate in the 3.3 to 4.2 GHz frequency range, making it suitable for various wireless communication systems, including WiMAX, point-to-point radio links, and other broadband wireless access (BWA) applications.

Features:

  1. High output power: The DRA716BGGCBDQ1 can deliver up to 27 dBm (400 mW) of output power, ensuring reliable communication over long distances.
  2. High efficiency: The GaN technology used in this device offers high efficiency, typically greater than 25%, which helps reduce power consumption and improve overall system performance.
  3. Excellent linearity: The DRA716BGGCBDQ1 exhibits low distortion and high adjacent channel power ratio (ACPR), making it suitable for high-data-rate communication systems.
  4. Compact size: The device is available in a small, 6x6 mm package, making it easy to integrate into various wireless communication systems.
  5. Robust design: The GaN technology used in this device is known for its high thermal conductivity and reliability, ensuring long-lasting performance in demanding environments.

Applications:

  1. WiMAX: The DRA716BGGCBDQ1 is well-suited for use in WiMAX base stations and customer premises equipment, providing high output power and efficiency for reliable communication.
  2. Point-to-point radio links: The device's high output power and excellent linearity make it an ideal choice for point-to-point radio links, ensuring stable and reliable communication over long distances.
  3. Broadband wireless access (BWA): The DRA716BGGCBDQ1 can be used in various BWA systems, providing high output power and efficiency for high-data-rate communication.
  4. Military and defense communication systems: The device's compact size, high efficiency, and robust design make it suitable for use in military and defense communication systems, where reliability and performance are critical.
  5. Cellular base stations: The DRA716BGGCBDQ1 can be used in cellular base stations to provide high output power and efficiency for improved communication coverage and capacity.

In summary, the Texas Instruments DRA716BGGCBDQ1 is a high-performance GaN power amplifier that offers excellent output power, efficiency, and linearity. Its compact size and robust design make it suitable for a wide range of wireless communication applications, including WiMAX, point-to-point radio links, and broadband wireless access systems.

FAQ

What operating temperature range does DRA716BGGCBDQ1 support?
DRA716BGGCBDQ1 has an operating temperature range of -40°C ~ 125°C (TJ).
Is DRA716BGGCBDQ1 currently in stock?
What package or case is DRA716BGGCBDQ1 available in?
What voltage specification is listed for DRA716BGGCBDQ1?
Are there related or alternative parts for DRA716BGGCBDQ1?
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