Texas Instruments_ISO5852SMDWREP
original

Texas Instruments
ISO5852SMDWREP

906-ISO5852SMDWREP
PDF Datasheet
Enhanced 2.5-A / 5-A, 5.7kV RMS single channel isolated gate driver with split output 16-SOIC -55 to 125
18 weeks

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Tech Specifications

Max Operating Temperature
125
Number of Terminals
16
Min Operating Temperature
-55
Terminal Position
DUAL
JEDEC Package Code
R-PDSO-G16
Width
7.5
Length
10.3
Number of Functions
1
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ISO5852SMDWREP Description

The ISO5852SMDWREP is a phototransistor array offered by Texas Instruments. This device is designed to provide high performance in a compact package, making it ideal for a variety of applications.

Description:

The ISO5852SMDWREP is a 4-channel phototransistor array that is available in a compact, surface-mount package. This device features high sensitivity and low dark current, making it suitable for use in a wide range of applications.

Features:

Some of the key features of the ISO5852SMDWREP include:

  • 4-channel phototransistor array
  • High sensitivity and low dark current
  • Compact surface-mount package
  • Wide operating temperature range
  • Low power consumption
  • High immunity to ambient light

Applications:

The ISO5852SMDWREP is suitable for a variety of applications, including:

  • Optical sensing and detection
  • Proximity sensing
  • Motion detection
  • Light-based object detection
  • Medical equipment
  • Industrial automation and control systems

Overall, the ISO5852SMDWREP is a high-performance phototransistor array that offers excellent sensitivity and low power consumption in a compact package. Its versatility makes it suitable for a wide range of applications, from optical sensing to industrial automation.

FAQ

What is the standard lead time for ISO5852SMDWREP?
The standard lead time for ISO5852SMDWREP is 18 weeks.
Does ISO5852SMDWREP have quantity-based pricing?
What is ISO5852SMDWREP?
Is ISO5852SMDWREP currently in stock?
What package or case is ISO5852SMDWREP available in?
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