Texas Instruments_ISO6761FQDWRQ1

Texas Instruments
ISO6761FQDWRQ1  
Digital Isolators

Texas Instruments
ISO6761FQDWRQ1
901-ISO6761FQDWRQ1
Ersa
Texas Instruments-ISO6761FQDWRQ1-datasheets-3739753.pdf
AUTOMOTIVE, GENERAL-PURPOSE, 50-
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ISO6761FQDWRQ1 Description

The ISO6761FQDWRQ1 is a high-performance, automotive-qualified isolated gate driver from Texas Instruments. It is designed to drive power MOSFETs and IGBTs in a wide range of automotive applications, including electric and hybrid vehicles, battery management systems, and motor control systems.

Description:

The ISO6761FQDWRQ1 is a monolithic integrated circuit that provides isolated gate drive for power MOSFETs and IGBTs. It features a high-voltage differential signal interface for communication between the primary and secondary sides of the isolation barrier. The device also includes built-in protection features such as overcurrent protection, under-voltage lockout, and short-circuit protection.

Features:

  • Automotive qualified: The ISO6761FQDWRQ1 is designed to meet the stringent requirements of automotive applications, including high temperature operation and robustness against electrical noise.
  • High isolation voltage: The device provides up to 2.5 kV of isolation voltage, ensuring safe and reliable operation in high-voltage environments.
  • Integrated protection features: The ISO6761FQDWRQ1 includes overcurrent protection, under-voltage lockout, and short-circuit protection to enhance the reliability and safety of the system.
  • High-voltage differential signal interface: The device uses a high-voltage differential signal interface for communication between the primary and secondary sides of the isolation barrier, providing fast and reliable communication.
  • Small package size: The ISO6761FQDWRQ1 is available in a compact QFN package, making it easy to integrate into space-constrained automotive applications.

Applications:

The ISO6761FQDWRQ1 is suitable for a wide range of automotive applications, including:

  • Electric and hybrid vehicles: The device can be used to drive power MOSFETs and IGBTs in the powertrain of electric and hybrid vehicles, providing efficient and reliable control of the motor.
  • Battery management systems: The ISO6761FQDWRQ1 can be used to drive power MOSFETs in battery management systems, providing efficient and reliable control of the charging and discharging of the battery.
  • Motor control systems: The device can be used to drive power MOSFETs and IGBTs in motor control systems, providing efficient and reliable control of the motor speed and torque.
  • Other high-voltage applications: The ISO6761FQDWRQ1 can also be used in other high-voltage applications that require isolated gate drive, such as industrial control systems and power supplies.

Tech Specifications

Inputs - Side 1/Side 2
Rise / Fall Time (Typ)
Common Mode Transient Immunity (Min)
Product Status
Supplier Device Package
Pulse Width Distortion (Max)
Isolated Power
Data Rate
Package / Case
Number of Channels
Technology
Voltage - Supply
Mfr
Channel Type
Propagation Delay tpLH / tpHL (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
Voltage - Isolation
ECCN
Grade
Mounting Type
Series
Type
Qualification
HTSUS
Package
Base Product Number
Mounting Style
Moisture Sensitive
USHTS
RoHS

ISO6761FQDWRQ1 Documents

Download datasheets and manufacturer documentation for ISO6761FQDWRQ1

Ersa Assembly/Wafer Fab Site 07/Jul/2023      
Ersa ISO676x-Q1      
Ersa ISO676x-Q1 Datasheet 06/Jun/2023       ISO67x 19/May/2022      

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