Texas Instruments

LM5113SD/NOPB

LM5113SD/NOPB Description

The LM5113SD/NOPB from Texas Instruments is a high-performance half-bridge gate driver IC designed for demanding power electronics applications. Housed in a compact 10-WSON package, it features dual independent drivers capable of delivering peak output currents of 1.2A (source) and 5A (sink), ensuring robust switching performance for MOSFETs and IGBTs. Operating within a 4.5V to 5.5V supply range, it supports high-side voltages up to 107V (bootstrap), making it suitable for high-voltage systems. With fast rise/fall times (7ns/1.5ns typ) and logic thresholds (VIL=1.76V, VIH=1.89V), it minimizes switching losses and enhances efficiency. Although marked as "Not for New Designs", it remains a reliable choice for legacy or cost-sensitive projects requiring high-speed gate driving.

LM5113SD/NOPB Features

• Dual Independent Drivers: Enables flexible half-bridge or synchronous buck configurations.
• High Current Drive: 5A sink current ensures rapid turn-off, reducing switching losses.
• Wide Bootstrap Voltage: Supports up to 107V, ideal for high-voltage applications.
• Fast Switching: 7ns rise and 1.5ns fall times optimize high-frequency operation.
• Robust Logic Interface: 1.76V/1.89V thresholds for noise immunity and compatibility with low-voltage controllers.
• Surface-Mount Package: 10-WSON for space-constrained designs.
• Compliance: ROHS3 and REACH compliant, with MSL 1 (Unlimited) moisture sensitivity.

LM5113SD/NOPB Applications

• Motor Drives: Efficiently controls high-current MOSFETs/IGBTs in brushed/brushless DC motors.
• Switch-Mode Power Supplies (SMPS): Enhances performance in synchronous buck/boost converters.
• Solar Inverters: High-voltage capability suits photovoltaic power conditioning systems.
• Industrial Power Systems: Reliable for UPS, welding equipment, and high-power DC-DC converters.
• Legacy Designs: Cost-effective solution for maintaining or upgrading older systems.

Conclusion of LM5113SD/NOPB

The LM5113SD/NOPB excels in high-speed, high-voltage gate driving with its dual-channel design, fast switching, and robust current handling. While no longer recommended for new designs, its performance, compact form factor, and compliance make it a pragmatic choice for legacy or niche applications requiring efficient power switching. Engineers valuing reliability, speed, and high-voltage tolerance will find this IC a compelling option.