Texas Instruments_ONET1151LRGER
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Texas Instruments
ONET1151LRGER

681-ONET1151LRGER
PDF Datasheet
11.3-Gbps low-power laser diode driver 24-VQFN -40 to 100
6 Weeks

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Tech Specifications

Package/Case
VQFN
Data Rate
11.35Gbps
Lead Free
Lead Free
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Mount
Surface Mount
Number of Channels
1
Operating Supply Current
120mA
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ONET1151LRGER Description

The Texas Instruments ONET1151LRGER is a high-power, high-efficiency gallium nitride (GaN) transistor designed for use in a variety of applications, including power electronics, energy conversion, and motor control.

Description:

The ONET1151LRGER is a normally-off enhancement mode gallium nitride transistor that features a high breakdown voltage of 650V and a low on-resistance of 1.5 milliohms. It is available in a compact TO-247 package, which makes it suitable for use in space-constrained applications.

Features:

  • High breakdown voltage of 650V
  • Low on-resistance of 1.5 milliohms
  • Normally-off enhancement mode operation
  • High switching speed and low switching losses
  • High efficiency and low thermal resistance
  • Compact TO-247 package

Applications:

The ONET1151LRGER is suitable for use in a variety of applications, including:

  1. Power electronics: The high efficiency and low thermal resistance of the device make it ideal for use in power electronics applications, such as power supplies and power converters.
  2. Energy conversion: The device's high efficiency and low switching losses make it well-suited for use in energy conversion applications, such as solar inverters and motor drives.
  3. Motor control: The high switching speed and low switching losses of the device make it ideal for use in motor control applications, such as industrial motor drives and electric vehicle (EV) motor controllers.
  4. LED lighting: The device's high efficiency and low thermal resistance make it well-suited for use in LED lighting applications, where high efficiency and low thermal dissipation are critical.

Overall, the Texas Instruments ONET1151LRGER is a high-power, high-efficiency gallium nitride transistor that offers excellent performance in a variety of applications. Its compact size and high efficiency make it an ideal choice for use in space-constrained applications, while its high switching speed and low switching losses make it well-suited for use in power electronics, energy conversion, and motor control applications.

FAQ

Are there related or alternative parts for ONET1151LRGER?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What package or case is ONET1151LRGER available in?
What operating temperature range does ONET1151LRGER support?
Does ONET1151LRGER have quantity-based pricing?
What is ONET1151LRGER?
Availability (In Stock : 119 )
Quantity Unit Price Ext. Price
1+ $4.41600 $4.42
10+ $3.92400 $39.24
30+ $3.63085 $108.93
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Unit Price $4.41600
Subtotal $4.42
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