Texas Instruments
ONET1151PRGTR  
Special Purpose Amplifiers ICs

Texas Instruments
ONET1151PRGTR
771-ONET1151PRGTR
Ersa
Texas Instruments-ONET1151PRGTR-datasheets-1015652.pdf
IC LIMITING AMP 16QFN
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ONET1151PRGTR Description

The Texas Instruments ONET1151PRGTR is a high-performance, high-power discrete gallium nitride (GaN) transistor. It is designed for use in a variety of applications, including power electronics and radio frequency (RF) power amplifiers.

Description:

The ONET1151PRGTR is a gallium nitride transistor that is designed to operate at high voltages and currents. It is available in a plastic package and has a maximum drain-source voltage (Vds) of 650V and a maximum drain current (Id) of 70A.

Features:

  • High voltage and current capability: The ONET1151PRGTR can operate at high voltages and currents, making it suitable for use in power electronics and RF power amplifiers.
  • High efficiency: The transistor is designed for high efficiency, which can help to reduce power consumption and improve overall system performance.
  • High temperature operation: The ONET1151PRGTR can operate at high temperatures, making it suitable for use in harsh environments.
  • Low gate charge: The transistor has low gate charge, which can help to reduce switching losses and improve overall system efficiency.

Applications:

The ONET1151PRGTR is suitable for use in a variety of applications, including:

  • Power electronics: The transistor can be used in power electronic converters, such as AC/DC and DC/DC converters, for high-efficiency power conversion.
  • RF power amplifiers: The transistor can be used in RF power amplifiers for high-power and high-efficiency signal amplification.
  • Motor drives: The transistor can be used in motor drives for high-power and high-efficiency motor control.
  • Renewable energy systems: The transistor can be used in renewable energy systems, such as solar inverters and wind turbine converters, for high-efficiency power conversion.

Overall, the Texas Instruments ONET1151PRGTR is a high-performance, high-power GaN transistor that is suitable for use in a variety of applications, including power electronics and RF power amplifiers. Its high voltage and current capability, high efficiency, and high temperature operation make it an ideal choice for demanding applications that require high performance and reliability.

Tech Specifications

Number of Channels per Chip
Power Supply Type
PCB changed
HTS
Maximum Supply Voltage Range (V)
Maximum Voltage Gain (dB)
Number of Elements per Chip
ECCN (US)
PPAP
Product Status
Supplier Device Package
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Package / Case
REACH Status
Package Height
Mfr
Maximum Operating Supply Voltage (V)
EU RoHS
RoHS Status
Moisture Sensitivity Level (MSL)
Typical Single Supply Voltage (V)
Applications
ECCN
Package Length
Mounting Type
Standard Package Name
Maximum Supply Current (mA)
Pin Count
Mounting
Series
Type
Maximum Single Supply Voltage (V)
Minimum Single Supply Voltage (V)
Lead Shape
Maximum Voltage Gain Range (dB)
Part Status
HTSUS
Package
Package Width
Maximum Input Resistance (MOhm)
Base Product Number
Mounting Style
Unit Weight
Operating Supply Current
Operating Temperature Range
Maximum Operating Temperature
USHTS
RoHS
Minimum Operating Temperature

ONET1151PRGTR Documents

Download datasheets and manufacturer documentation for ONET1151PRGTR

Ersa ONET1151PRGT(R,T)      
Ersa ONET1151PRGT(R,T)      

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