Texas Instruments_TLE2141QDRQ1

Texas Instruments
TLE2141QDRQ1  
OP Amps, Buffer Amps ICs

Texas Instruments
TLE2141QDRQ1
687-TLE2141QDRQ1
Ersa
Texas Instruments-TLE2141QDRQ1-datasheets-13165161.pdf
IC OPAMP GP 1 CIRCUIT 8SOIC
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    TLE2141QDRQ1 Description

    The TLE2141QDRQ1 is a high-voltage, high-current half-bridge gate driver IC manufactured by Texas Instruments. It is designed to drive high-power MOSFETs and IGBTs in a wide range of applications, including motor control, power conversion, and renewable energy systems.

    Description:

    The TLE2141QDRQ1 is a monolithic integrated circuit that provides a high-voltage and high-current gate drive for external power MOSFETs and IGBTs. It features a half-bridge configuration, with two gate driver channels that can independently control the switching of two power devices. The device is available in a 16-pin QFN package.

    Features:

    1. High-voltage operation: The TLE2141QDRQ1 can operate with supply voltages up to 18 V, making it suitable for driving power devices in high-voltage applications.
    2. High-current drive capability: The gate driver can source and sink up to ±2 A of peak current, ensuring fast switching and reducing switching losses in the power devices.
    3. Independent gate driver channels: The two gate driver channels can be controlled independently, allowing for precise control of the power devices in a half-bridge configuration.
    4. Wide input voltage range: The device can accept input voltages from 4.75 V to 18 V, making it suitable for a wide range of applications.
    5. Undervoltage lockout (UVLO) protection: The TLE2141QDRQ1 features an undervoltage lockout function that prevents the gate driver from operating if the supply voltage falls below a certain threshold.
    6. Thermal shutdown protection: The device includes a thermal shutdown feature that disables the gate driver if the temperature exceeds a predefined limit, protecting the power devices from thermal damage.
    7. Desaturation protection: The TLE2141QDRQ1 provides desaturation protection to prevent the power devices from entering a saturated state, which can cause excessive power dissipation and damage.

    Applications:

    1. Motor control: The TLE2141QDRQ1 can be used to drive power MOSFETs and IGBTs in motor control applications, such as electric vehicles, industrial motor drives, and appliance motors.
    2. Power conversion: The gate driver is suitable for driving power devices in power conversion applications, including AC/DC converters, DC/DC converters, and solar inverters.
    3. Renewable energy systems: The TLE2141QDRQ1 can be used in renewable energy systems, such as solar power generation and wind turbines, to drive the power devices in the energy conversion stages.
    4. Battery management systems: The gate driver can be used in battery management systems to control the switching of power MOSFETs and IGBTs in battery charging and discharging circuits.
    5. High-voltage power supplies: The TLE2141QDRQ1 can be used in high-voltage power supply applications, such as telecom power supplies and medical equipment power supplies, to drive the power devices in the conversion stages.

    Tech Specifications

    Voltage - Supply Span (Max)
    Number of Channels per Chip
    Power Supply Type
    Maximum Input Offset Voltage (mV)
    Typical Output Current (mA)
    PPAP
    Gain Bandwidth Product
    Product Status
    Current - Input Bias
    Automotive
    Maximum Input Offset Current (uA)
    Supplier Package
    Package / Case
    Typical Voltage Gain (dB)
    REACH Status
    EU RoHS
    Amplifier Type
    Maximum Dual Supply Voltage (V)
    Moisture Sensitivity Level (MSL)
    Typical Input Noise Voltage Density (nV/rtHz)
    Operating Temperature
    Typical Slew Rate (V/us)
    ECCN
    Grade
    Supplier Temperature Grade
    Mounting Type
    Current - Supply
    Standard Package Name
    Pin Count
    Shut Down Support
    Mounting
    Qualification
    Minimum Single Supply Voltage (V)
    Typical Dual Supply Voltage (V)
    Voltage - Supply Span (Min)
    Lead Shape
    SVHC
    Manufacturer Type
    HTSUS
    Package
    Current - Output / Channel
    Minimum CMRR (dB)
    Maximum Quiescent Current (mA)
    PCB changed
    Output Type
    HTS
    ECCN (US)
    Supplier Device Package
    Minimum CMRR Range (dB)
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Process Technology
    Typical Gain Bandwidth Product (MHz)
    Package Height
    Mfr
    RoHS Status
    Maximum Input Bias Current (uA)
    Typical Noninverting Input Current Noise Density (pA/rtHz)
    Slew Rate
    Package Length
    Minimum Dual Supply Voltage (V)
    Voltage - Input Offset
    Series
    Type
    Maximum Single Supply Voltage (V)
    Part Status
    Number of Circuits
    Package Width
    Typical Settling Time (ns)
    Base Product Number
    Unit Weight
    en - Input Voltage Noise Density
    Vos - Input Offset Voltage
    Minimum Dual Supply Voltage
    Product
    RoHS
    Supply Voltage - Min
    Operating Supply Current
    SR - Slew Rate
    Number of Channels
    Features
    Maximum Operating Temperature
    Ib - Input Bias Current
    Supply Voltage - Max
    Mounting Style
    Input Type
    Minimum Operating Temperature
    CMRR - Common Mode Rejection Ratio
    Shutdown
    Operating Supply Voltage
    Output Current per Channel
    Supply Type
    USHTS
    GBP - Gain Bandwidth Product

    TLE2141QDRQ1 Documents

    Download datasheets and manufacturer documentation for TLE2141QDRQ1

    Ersa Mult Dev 30/Oct/2019      
    Ersa TLE2141-Q1      
    Ersa TLE2141-Q1      
    Ersa Mult Devices Font 21/Apr/2018       Design 25/Feb/2022      

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