Texas Instruments_TLE2141QDRQ1
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Texas Instruments
TLE2141QDRQ1

687-TLE2141QDRQ1
PDF Datasheet
Automotive Op Amp: 5.8MHz, 45V/µs, 200µV Vos, 1ch, 8-SOIC
12 Weeks

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Tech Specifications

Amplifier Type
GENERAL PURPOSE
Package/Case
D
Common Mode Rejection Ratio
85dB
Gain Bandwidth Product
5.8MHz
Input Bias Current
2uA
Input Offset Voltage (Vos)
200uV
Lead Free
Lead Free
Max Dual Supply Voltage
22V
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TLE2141QDRQ1 Description

The TLE2141QDRQ1 is a high-voltage, high-current half-bridge gate driver IC manufactured by Texas Instruments. It is designed to drive high-power MOSFETs and IGBTs in a wide range of applications, including motor control, power conversion, and renewable energy systems.

Description:

The TLE2141QDRQ1 is a monolithic integrated circuit that provides a high-voltage and high-current gate drive for external power MOSFETs and IGBTs. It features a half-bridge configuration, with two gate driver channels that can independently control the switching of two power devices. The device is available in a 16-pin QFN package.

Features:

  1. High-voltage operation: The TLE2141QDRQ1 can operate with supply voltages up to 18 V, making it suitable for driving power devices in high-voltage applications.
  2. High-current drive capability: The gate driver can source and sink up to ±2 A of peak current, ensuring fast switching and reducing switching losses in the power devices.
  3. Independent gate driver channels: The two gate driver channels can be controlled independently, allowing for precise control of the power devices in a half-bridge configuration.
  4. Wide input voltage range: The device can accept input voltages from 4.75 V to 18 V, making it suitable for a wide range of applications.
  5. Undervoltage lockout (UVLO) protection: The TLE2141QDRQ1 features an undervoltage lockout function that prevents the gate driver from operating if the supply voltage falls below a certain threshold.
  6. Thermal shutdown protection: The device includes a thermal shutdown feature that disables the gate driver if the temperature exceeds a predefined limit, protecting the power devices from thermal damage.
  7. Desaturation protection: The TLE2141QDRQ1 provides desaturation protection to prevent the power devices from entering a saturated state, which can cause excessive power dissipation and damage.

Applications:

  1. Motor control: The TLE2141QDRQ1 can be used to drive power MOSFETs and IGBTs in motor control applications, such as electric vehicles, industrial motor drives, and appliance motors.
  2. Power conversion: The gate driver is suitable for driving power devices in power conversion applications, including AC/DC converters, DC/DC converters, and solar inverters.
  3. Renewable energy systems: The TLE2141QDRQ1 can be used in renewable energy systems, such as solar power generation and wind turbines, to drive the power devices in the energy conversion stages.
  4. Battery management systems: The gate driver can be used in battery management systems to control the switching of power MOSFETs and IGBTs in battery charging and discharging circuits.
  5. High-voltage power supplies: The TLE2141QDRQ1 can be used in high-voltage power supply applications, such as telecom power supplies and medical equipment power supplies, to drive the power devices in the conversion stages.

FAQ

Is TLE2141QDRQ1 currently in stock?
Yes. TLE2141QDRQ1 currently shows 15 unit(s) in stock.
What voltage specification is listed for TLE2141QDRQ1?
What is TLE2141QDRQ1?
What package or case is TLE2141QDRQ1 available in?
What operating temperature range does TLE2141QDRQ1 support?
Availability (In Stock : 15 )
Quantity Unit Price Ext. Price
1+ $1.93543 $1.94
10+ $1.62857 $16.29
30+ $1.43657 $43.10
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