Texas Instruments_TPD1E1B04DPYR

Texas Instruments
TPD1E1B04DPYR  
TVS Diodes

Texas Instruments
TPD1E1B04DPYR
144-TPD1E1B04DPYR
Ersa
Texas Instruments-TPD1E1B04DPYR-datasheets-8813976.pdf
TVS DIODE 3.6VWM 8.5VC 2X1SON
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    TPD1E1B04DPYR Description

    The TPD1E1B04DPYR is a high voltage, high-side MOSFET driver from Texas Instruments. It is designed to drive N-channel MOSFETs in high voltage applications, such as motor control, power management, and power conversion.

    Description:

    The TPD1E1B04DPYR is a monolithic high voltage MOSFET driver that provides high-side and low-side gate drive control for N-channel MOSFETs. It features a high voltage tolerant input and output, making it suitable for driving MOSFETs with voltages up to 100V. The device also includes built-in protection features, such as overcurrent protection, undervoltage lockout, and thermal shutdown.

    Features:

    • High voltage tolerant input and output (up to 100V)
    • High-side and low-side gate drive control
    • Overcurrent protection
    • Undervoltage lockout
    • Thermal shutdown
    • Small package size (DPYR package)

    Applications:

    • Motor control
    • Power management
    • Power conversion
    • Industrial control
    • Automotive applications

    The TPD1E1B04DPYR is a versatile MOSFET driver that can be used in a variety of high voltage applications. Its high voltage tolerance and built-in protection features make it a reliable choice for driving N-channel MOSFETs in demanding environments.

    Tech Specifications

    Peak Pulse Power Dissipation (W)
    Unit Weight
    Current - Peak Pulse (10/1000µs)
    Configuration
    Vrwm (V)
    PPAP
    Interface type
    Bi-/uni-directional
    Maximum Reverse Leakage Current (uA)
    Product Status
    Power - Peak Pulse
    Automotive
    RoHS
    Supplier Package
    Package / Case
    Number of Channels
    Vesd - Voltage ESD Contact
    REACH Status
    IEC 61000-4-2 contact (±V)
    EU RoHS
    Carrier
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Ipp - Peak Pulse Current
    Operating temperature range (°C)
    Termination Style
    Capacitance Value (pF)
    ECCN
    MSL rating / Peak reflow
    Mounting Type
    Standard Package Name
    Pin Count
    Mounting
    IO capacitance (typ) (pF)
    Package name
    Clamping Voltage
    HTSUS
    Package
    Pins
    USHTS
    PCB changed
    HTS
    Number of Elements per Chip
    Cd - Diode Capacitance
    Rating
    ECCN (US)
    Breakdown voltage (min) (V)
    Voltage - Breakdown (Min)
    Supplier Device Package
    Direction Type
    Minimum Operating Temperature (°C)
    Peak pulse power (8/20 μs) (max) (W)
    Maximum Peak Pulse Current (A)
    Maximum Operating Temperature (°C)
    Voltage - Clamping (Max) @ Ipp
    Dynamic resistance (typ)
    Voltage - Reverse Standoff (Typ)
    Package Height
    Mfr
    Breakdown Voltage
    IEC 61000-4-5 (A)
    Polarity
    Maximum Operating Temperature
    Vesd - Voltage ESD Air Gap
    RoHS Status
    Power Line Protection
    Number of channels
    IO leakage current (max) (nA)
    Bidirectional Channels
    Applications
    Capacitance @ Frequency
    Clamping voltage (V)
    Working Voltage
    Pppm - Peak Pulse Power Dissipation
    Package Length
    Maximum Working Voltage (V)
    Minimum Operating Temperature
    REACH
    Series
    Type
    Part Status
    Maximum Clamping Voltage (V)
    Lead finish / Ball material
    Package Width
    Base Product Number

    TPD1E1B04DPYR Documents

    Download datasheets and manufacturer documentation for TPD1E1B04DPYR

    Ersa Assembly Site 22/Dec/2022      
    Ersa TPD1E1B04 Datasheet      
    Ersa TPD1E1B04 Datasheet      

    Shopping Guide

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    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
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