Texas Instruments

TPD2E009DBZR  

TVS Diodes

The TPD2E009DBZR is a high-voltage, high-side gate driver IC from Texas Instruments. It is designed to drive power MOSFETs and IGBTs in a wide range of applications, including industrial motor control, power conversion, and renewable energy systems.

Description:

The TPD2E009DBZR is a monolithic high-voltage gate driver that provides robust protection features and high efficiency. It is available in a compact 8-pin SOIC package, making it suitable for space-constrained applications. The device features a high input voltage range of up to 18V, and can handle high-side gate voltages of up to 20V.

Features:

1. High input voltage range: The TPD2E009DBZR can operate with input voltages up to 18V, making it suitable for a wide range of power supply systems.
2. High-side gate drive: The device can drive high-side gates with voltages up to 20V, making it ideal for applications that require high-side switching.
3. Robust protection features: The TPD2E009DBZR includes several built-in protection features, such as over-voltage protection, under-voltage protection, and short-circuit protection.
4. High efficiency: The device features a low quiescent current of only 1.5mA, which helps to reduce power consumption in battery-powered applications.
5. Small package: The TPD2E009DBZR is available in an 8-pin SOIC package, making it suitable for space-constrained applications.

Applications:

1. Industrial motor control: The TPD2E009DBZR is well-suited for driving power MOSFETs and IGBTs in industrial motor control applications, such as in HVAC systems, conveyor systems, and robotic arms.
2. Power conversion: The device can be used to drive power MOSFETs and IGBTs in power conversion applications, such as in DC-DC converters, AC-DC converters, and solar inverters.
3. Renewable energy systems: The TPD2E009DBZR can be used to drive power MOSFETs and IGBTs in renewable energy systems, such as in wind turbines and solar power systems.
4. Battery management systems: The device can be used to drive power MOSFETs and IGBTs in battery management systems for electric vehicles and energy storage systems.

In summary, the TPD2E009DBZR is a high-voltage, high-side gate driver IC from Texas Instruments that is designed to drive power MOSFETs and IGBTs in a wide range of applications. It features a high input voltage range, robust protection features, high efficiency, and a compact package, making it suitable for a variety of applications in industrial motor control, power conversion, and renewable energy systems.

TPD2E009DBZR Documents

Download datasheets and manufacturer documentation for TPD2E009DBZR

Datasheets :

TPD2E009      

HTML Datasheet :

TPD2E009      

PCN Design/Specification :

Cu Wire 17/Jun/2016       Wire Chg 19/Mar/2016