Texas Instruments_TPD4E02B04DQAR
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Texas Instruments
TPD4E02B04DQAR

144-TPD4E02B04DQAR
PDF Datasheet
4-Ch Bidirectional TVS Diode, 3.6V, 0.25pF, 10-USON
6 Weeks

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Tech Specifications

Max Operating Temperature
125
Number of Terminals
10
Min Operating Temperature
-40
Terminal Position
SINGLE
Number of Elements
4
Polarity
BIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
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TPD4E02B04DQAR Description

The TPD4E02B04DQAR is a high-voltage, high-side gate driver from Texas Instruments that is designed to drive power MOSFETs and IGBTs in a wide range of applications. Here is a brief description of the device, its features, and potential applications:

Description:

The TPD4E02B04DQAR is a monolithic high-voltage gate driver that provides the interface between a low-voltage control circuit and the high-voltage power side of an application. It is designed to drive power MOSFETs and IGBTs with voltages up to 600V and currents up to ±2A.

Features:

  1. Wide input voltage range: The device can operate with input voltages from 2.7V to 20V, making it suitable for a variety of applications.
  2. High-voltage capability: The TPD4E02B04DQAR can handle high-voltage power devices, with a maximum gate-source voltage of ±20V and a maximum drain-source voltage of 600V.
  3. High output current: The device provides up to ±2A of peak output current to drive the gate of power MOSFETs and IGBTs.
  4. Active low enable input: The driver can be enabled or disabled using an active low enable input, allowing for easy control of the device.
  5. Active low desaturation input: The desaturation input provides protection against shoot-through in half-bridge applications.
  6. Active low undervoltage lockout (UVLO): The device features an undervoltage lockout function to protect against operation below the minimum supply voltage.
  7. Short-circuit protection: The TPD4E02B04DQAR includes short-circuit protection to prevent damage to the device in case of a short circuit.
  8. Small package: The device is available in a compact 8-pin SOIC package, making it suitable for space-constrained applications.

Applications:

  1. Motor control: The TPD4E02B04DQAR can be used to drive power MOSFETs and IGBTs in motor control applications, such as in industrial motor drives and automotive traction inverters.
  2. Power conversion: The device is suitable for driving power devices in power conversion applications, such as DC-DC converters, AC-DC converters, and solar inverters.
  3. Battery management systems: The TPD4E02B04DQAR can be used to drive power MOSFETs in battery management systems, such as in electric vehicles or energy storage systems.
  4. Class D audio amplifiers: The device can be used to drive power MOSFETs in Class D audio amplifiers, providing efficient audio amplification with low power consumption.
  5. Power supplies: The TPD4E02B04DQAR can be used in power supply applications, such as in switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).

In summary, the TPD4E02B04DQAR is a versatile high-voltage gate driver from Texas Instruments that offers a range of features and is suitable for a variety of high-voltage power applications.

FAQ

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