Texas Instruments
TPD4E02B04DQAR  
TVS Diodes

Texas Instruments
TPD4E02B04DQAR
144-TPD4E02B04DQAR
Ersa
Texas Instruments-TPD4E02B04DQAR-datasheets-7978321.pdf
TVS DIODE 3.6VWM 8.8VC 10USON
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    TPD4E02B04DQAR Description

    The TPD4E02B04DQAR is a high-voltage, high-side gate driver from Texas Instruments that is designed to drive power MOSFETs and IGBTs in a wide range of applications. Here is a brief description of the device, its features, and potential applications:

    Description:

    The TPD4E02B04DQAR is a monolithic high-voltage gate driver that provides the interface between a low-voltage control circuit and the high-voltage power side of an application. It is designed to drive power MOSFETs and IGBTs with voltages up to 600V and currents up to ±2A.

    Features:

    1. Wide input voltage range: The device can operate with input voltages from 2.7V to 20V, making it suitable for a variety of applications.
    2. High-voltage capability: The TPD4E02B04DQAR can handle high-voltage power devices, with a maximum gate-source voltage of ±20V and a maximum drain-source voltage of 600V.
    3. High output current: The device provides up to ±2A of peak output current to drive the gate of power MOSFETs and IGBTs.
    4. Active low enable input: The driver can be enabled or disabled using an active low enable input, allowing for easy control of the device.
    5. Active low desaturation input: The desaturation input provides protection against shoot-through in half-bridge applications.
    6. Active low undervoltage lockout (UVLO): The device features an undervoltage lockout function to protect against operation below the minimum supply voltage.
    7. Short-circuit protection: The TPD4E02B04DQAR includes short-circuit protection to prevent damage to the device in case of a short circuit.
    8. Small package: The device is available in a compact 8-pin SOIC package, making it suitable for space-constrained applications.

    Applications:

    1. Motor control: The TPD4E02B04DQAR can be used to drive power MOSFETs and IGBTs in motor control applications, such as in industrial motor drives and automotive traction inverters.
    2. Power conversion: The device is suitable for driving power devices in power conversion applications, such as DC-DC converters, AC-DC converters, and solar inverters.
    3. Battery management systems: The TPD4E02B04DQAR can be used to drive power MOSFETs in battery management systems, such as in electric vehicles or energy storage systems.
    4. Class D audio amplifiers: The device can be used to drive power MOSFETs in Class D audio amplifiers, providing efficient audio amplification with low power consumption.
    5. Power supplies: The TPD4E02B04DQAR can be used in power supply applications, such as in switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).

    In summary, the TPD4E02B04DQAR is a versatile high-voltage gate driver from Texas Instruments that offers a range of features and is suitable for a variety of high-voltage power applications.

    Tech Specifications

    Peak Pulse Power Dissipation (W)
    Unit Weight
    Current - Peak Pulse (10/1000µs)
    Configuration
    Vrwm (V)
    PPAP
    Interface type
    Bi-/uni-directional
    Maximum Reverse Leakage Current (uA)
    Product Status
    Power - Peak Pulse
    Automotive
    RoHS
    Supplier Package
    Package / Case
    Number of Channels
    Vesd - Voltage ESD Contact
    REACH Status
    Fail Safe Protection
    IEC 61000-4-2 contact (±V)
    EU RoHS
    Carrier
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Ipp - Peak Pulse Current
    Operating temperature range (°C)
    Termination Style
    Capacitance Value (pF)
    ECCN
    Supplier Temperature Grade
    MSL rating / Peak reflow
    Mounting Type
    Standard Package Name
    Pin Count
    Mounting
    IO capacitance (typ) (pF)
    Package name
    Lead Shape
    Clamping Voltage
    HTSUS
    Package
    Pins
    USHTS
    PCB changed
    HTS
    Number of Elements per Chip
    Cd - Diode Capacitance
    Rating
    ECCN (US)
    Minimum Breakdown Voltage (V)
    Breakdown voltage (min) (V)
    Voltage - Breakdown (Min)
    Supplier Device Package
    Direction Type
    Minimum Operating Temperature (°C)
    Peak pulse power (8/20 μs) (max) (W)
    Maximum Peak Pulse Current (A)
    Maximum Operating Temperature (°C)
    Voltage - Clamping (Max) @ Ipp
    Dynamic resistance (typ)
    Voltage - Reverse Standoff (Typ)
    Package Height
    Mfr
    Breakdown Voltage
    IEC 61000-4-5 (A)
    Polarity
    Maximum Operating Temperature
    Test Current (mA)
    Vesd - Voltage ESD Air Gap
    RoHS Status
    Power Line Protection
    Number of channels
    IO leakage current (max) (nA)
    Bidirectional Channels
    Applications
    Capacitance @ Frequency
    Clamping voltage (V)
    Working Voltage
    Pppm - Peak Pulse Power Dissipation
    Package Length
    Maximum Working Voltage (V)
    Minimum Operating Temperature
    REACH
    Series
    Type
    Operating Supply Voltage
    Part Status
    Maximum Clamping Voltage (V)
    Lead finish / Ball material
    Package Width
    Maximum Breakdown Voltage (V)
    Base Product Number

    TPD4E02B04DQAR Documents

    Download datasheets and manufacturer documentation for TPD4E02B04DQAR

    Ersa Assembly Site 20/Dec/2023      
    Ersa TPD4E02B04 Datasheet      
    Ersa TPD4E02B04 Datasheet      

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